s-8233bcft-tb-g Seiko Instruments Inc., s-8233bcft-tb-g Datasheet - Page 6

• Manufacturer Part Number: s-8233bcft-tb-g
• Description: Battery Protection Ic For 3-serial-cell Pack
• Manufacturer: Seiko Instruments Inc.

6
Detection voltage
Over charge detection voltage 1
Over charge release voltage 1
Over discharge detection voltage 1
Over discharge release voltage 1
Over charge detection voltage 2
Over charge release voltage 2
Over discharge detection voltage 2
Over discharge release voltage 2
Over charge detection voltage 3
Over charge release voltage 3
Over discharge detection voltage 3
Over discharge release voltage 3
Over current detection voltage 1
Over current detection voltage 2
Over current detection voltage 3
Voltage temperature factor 1
Voltage temperature factor 2
Delay time
Over charge detection delay time 1
Over charge detection delay time 2
Over charge detection delay time 3
Over discharge detection delay time 1 t
Over discharge detection delay time 2 t
Over discharge detection delay time 3 t
Over current detection delay time 1
Over current detection delay time 2
Over current detection delay time 3
Operating voltage
Operating voltage between VCC and
VSS
Current consumption
Current consumption (during normal
operation)
Current consumption for cell 1
Current consumption for cell 2
Current consumption for cell 3
Current consumption at power down
Internal resistance with 0V battery charging function type
Resistance between VCC and VMP
Resistance between VSS and VMP
Internal resistance without 0V battery charging function type.
Resistance between VCC and VMP
Resistance between VSS and VMP
Input voltage
CTL"H" Input voltage
CTL"L" Input voltage
BATTERY PROTECTION IC FOR 3-SERIAL-CELL PACK
S-8233B Series
Electrical Characteristics
*5
Item
*2
*3
*1
Symbol
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
T
T
t
t
t
t
t
t
V
I
I
I
I
I
R
R
R
R
V
V
CU1
CU2
CU3
DD1
DD2
DD3
IOV1
IOV2
IOV3
OPE
CELL1
CELL2
CELL3
PDN
COE1
COE2
CU1
CD1
DD1
DU1
CU2
CD2
DD2
DU2
CU3
CD3
DD3
DU3
IOV1
IOV2
IOV3
DSOP
CTL(H)
CTL(L)
VCM
VSM
VCM
VSM
0.15 to 0.50V Adjustment
3.80 to 4.40 Adjustment
3.45 to 4.40 Adjustment
2.00 to 2.80 Adjustment
2.00 to 4.00 Adjustment
3.80 to 4.40 Adjustment
3.45 to 4.40 Adjustment
2.00 to 2.80 Adjustment
2.00 to 4.00 Adjustment
3.80 to 4.40 Adjustment
3.45 to 4.40 Adjustment
2.00 to 2.80 Adjustment
2.00 to 4.00 Adjustment
FET gate capacitor
V1=V2=V3=3.5 V
V1=V2=V3=3.5 V
V1=V2=V3=3.5 V
V1=V2=V3=3.5 V
V1=V2=V3=1.5 V
V1=V2=V3=3.5 V
V1=V2=V3=1.5 V
V1=V2=V3=3.5 V
V1=V2=V3=1.5 V
Ta=-20 to 70°C
Ta=-20 to 70°C
V
V
C
C
C
C
C
C
C
CC
SS
CCT
CCT
CCT
Seiko Instruments Inc.
COVT
Condition
=2000 pF
CDT
CDT
CDT
Reference
Reference
=0.47 µF
=0.47 µF
=0.47 µF
=0.1 µF
=0.1 µF
=0.1 µF
=0.1 µF
−
−
−
−
Table 4 (1 / 2)
*4
*4
V
V
V
V
V
V
V
V
V
V
V
V
V
V
CU1
CU2
CU3
CD1
DD1
DU1
CD2
DD2
DU2
CD3
DD3
DU3
IOV1
CC
−300
−300
−300
0.54
0.20
0.20
0.40
0.40
Min.
-1.0
-0.5
100
1.0
0.5
0.5
0.5
2.0
20
20
20
10
-0.025
-0.025
-0.025
2
−
−
−
-0.10
-0.08
-0.10
-0.10
-0.08
-0.10
-0.10
-0.08
-0.10
x 0.8
×0.9
(Ta = 25°C unless otherwise specified)
V
V
V
V
V
V
V
V
V
V
V
V
V
0.50
0.50
0.90
0.90
Typ.
300
0.6
2.0
1.0
1.0
1.0
40
40
40
20
20
IOV1
CU1
CD1
DD1
DU1
CU2
CD2
DD2
DU2
CU3
CD3
DD3
DU3
0
0
4
−
0
0
0
−
−
−
V
V
V
V
V
V
V
V
V
V
V
V
V
V
CU1
CU2
CU3
CD1
DD1
DU1
CD2
DD2
DU2
CD3
DD3
DU3
IOV1
CC
Max.
0.66
0.80
0.80
1.40
1.40
550
300
300
300
3.0
1.0
0.5
1.5
1.5
1.5
0.1
+0.025
+0.025
+0.025
60
60
60
30
24
50
+0.10
+0.08
+0.10
+0.10
+0.08
+0.10
+0.10
+0.08
+0.10
8
−
x 0.2
×1.1
mV/°C
mV/°C
Unit
MΩ
MΩ
MΩ
MΩ
ms
ms
ms
ms
ms
µA
nA
nA
nA
µA
µs
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
s
s
s
condition
Test
Rev.4.3
10
11
10
11
12
12
12
16
16
1
1
1
1
2
2
2
2
3
3
3
3
4
4
4
−
−
9
9
−
5
5
5
5
5
6
6
6
6
circuit
Test
1
1
1
1
1
1
1
1
1
1
1
1
2
2
2
6
6
6
6
6
6
7
7
7
3
3
3
3
3
3
3
3
3
1
1
_00
−
−
−