m5m5v5636gp-16 Renesas Electronics Corporation., m5m5v5636gp-16 Datasheet - Page 10

• Manufacturer Part Number: m5m5v5636gp-16
• Description: 18874368-bit 524288-word By 36-bit Network Sram
• Manufacturer: Renesas Electronics Corporation.

C
C
Note19.This parameter is sampled.
THERMAL RESISTANCE
4-Layer PC board mounted (70x70x1.6mmT)
Note20.This parameter is sampled.
AC ELECTRICAL CHARACTERISTICS (Ta=0~70°C, V
(1)MEASUREMENT CONDITION
Note21.Valid Delay Measurement is made from the V
Note22.Tri-state toff measurement is made from the V
Note23. Tri-state ton measurement is made from the V
Note24.Clocks,Data,Address and control signals will be tested with a minimum input slew rate of
10/18
CAPACITANCE
JA
JC
Symbol
I
O
Symbol
Input pulse levels ········································ V
Input rise and fall times ······························· faster than or equal to 1V/ns
Input timing reference levels ······················· V
Output reference levels ·······························V
Output load ·················································· Fig.1
Input
Waveform
Output
Waveform
Input waveform should have a slew rate of
from its initial to final Value V
Note:the initial value is not V
from its initial Value V
Note:the final value is not V
Q
Input Capacitance
Input / Output(DQ) Capacitance
Thermal Resistance Junction Ambient
Thermal Resistance Junction to Case
Fig.2 Tdly measurement
Fig.1 Output load
Z
O
=50
V
Parameter
Parameter
DDQ
t
plh
DDQ
V
DDQ
/ 2
/2 to its final Value.
/ 2
OL
OL
DDQ
or V
or V
/2.
V
OH
T
OH
=0.5*V
t
as specified in DC ELECTRICAL CHARACTERISTICS table.
phl
50
as specified in DC ELECTRICAL CHARACTERISTICS table.
(Including wiring and JIG)
DDQ
faster than or equal to
DDQ
DDQ
DDQ
IH
IH
IH
=V
V
V
Air velocity=0m/sec
Air velocity=2m/sec
=V
/2 on the input waveform to the V
=V
/2 on the input waveform to the output waveform moving 20%
/2 on the input waveform to the output waveform moving 20%
I
O
=GND, V
30pF
=GND, V
IL
DDQ
IL
=0.5*V
Input
Waveform
Output
Waveform
DD
=0.5*V
, V
=3.135~3.465V or V
IL
I
=25mVrms, f=1MHz
Conditions
Conditions
O
DDQ
=0V
DDQ
=25mVrms, f=1MHz
Vh
Vl
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
1V/ns.
(toff)
Fig.3 Tri-State measurement
Vh-(0.2(Vh-Vz)) Vz+(0.2(Vh-Vz))
0.2(Vz-Vl)
DD
toff
=2.375~2.625V, unless otherwise noted)
DDQ
V
/2 on the output waveform.
M5M5V5636GP –16
DDQ
Min
Min
faster than or equal to
/ 2
Vz
Vz-(0.2(Vz-Vl))
M5M5V5636GP-16 REV.2.0
ton
Limits
Limits
Typ
Typ
6.6
28
20
Renesas LSIs
Max
Max
(ton)
6
8
1V/ns.
°C/W
°C/W
°C/W
Unit
Unit
pF
pF