m29dw256g Numonyx, m29dw256g Datasheet - Page 59
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m29dw256g
Manufacturer Part Number
m29dw256g
Description
256-mbit X16, Multiple Bank, Page, Dual Boot 3 V Supply Flash Memory
Manufacturer
Numonyx
Datasheet
1.M29DW256G.pdf
(84 pages)
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Figure 15. Write enable controlled program waveforms
1. Only the third and fourth cycles of the Program command are represented. The Program command is followed by the check
2. PA is the address of the memory location to be programmed. PD is the data to be programmed.
3. DQ7 is the complement of the data bit being programmed to DQ7 (see
4.
of status register data polling bit and by a read operation that outputs the data, DOUT, programmed by the previous
Program command.
SeeTable 24: Write AC characteristics, write enable
and
Table 23: Read AC characteristics
DQ0-DQ15
A0-A23
E
G
W
tAVAV
tGHWL
tELWL
tWLWH
tDVWH
3rd cycle
tAVWL
555h
for details on the timings.
AOh
4th cycle
tWHDX
tWHEH
PA
controlled,
tWHWL
PD
tWLAX
Table 25: Write AC characteristics, chip enable controlled
tWHWH1
Data Polling
Section 7.1: Data polling bit
PA
DQ7
M29DW_Write_Enable_Controlled_Program_Waveforms
D OUT
tAVAV
tGHQZ
Read cycle
D OUT
(DQ7)).
tELQV
tGLQV
tAXQX
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