is45s32200e Integrated Silicon Solution, Inc., is45s32200e Datasheet - Page 37

• Manufacturer Part Number: is45s32200e
• Description: 512k Bits X 32 Bits X 4 Banks 64-mbit Synchronous Dynamic Ram
• Manufacturer: Integrated Silicon Solution, Inc.

IS45S32200E
Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
02/07/08
OPERATING FREQUENCY / LATENCY RELATIONSHIPS
AC TEST CONDITIONS
Input Load
SYMBOL
—
—
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Note:
1. If CL = 2, the minimum t
CCD
CKED
PED
DQD
DQM
DQZ
DWD
DAL
DPL
BDL
CDL
RDL
MRD
ROH
OUTPUT
INPUT
CLK
2.75V
0.25V
2.75V
0.25V
1.5V
1.5V
PARAMETER
Clock Cycle Time
Operating Frequency
READ/WRITE command to READ/WRITE command
CKE to clock disable or power-down entry mode
CKE to clock enable or power-down exit setup mode
DQM to input data delay
DQM to data mask during WRITEs
DQM to data high-impedance during READs
WRITE command to input data delay
Data-in to ACTIVE command
Data-in to PRECHARGE command
Last data-in to burst STOP command
Last data-in to new READ/WRITE command
Last data-in to PRECHARGE command
LOAD MODE REGISTER command
to ACTIVE or REFRESH command
Data-out to high-impedance from
PRECHARGE command
t
OH
t
CS
1.5V
CK
t
CH
t
2
CHI
is 10ns.
(Input/Output Reference Level: 1.5V)
t
AC
t
CK
t
CL
1.5V
Output Load
CONDITION
CL=3
CL=3
CL=2
CL = 3
CL = 2
I/O
(1)
30 pF
50
166
-6
6
1
1
1
0
0
2
0
5
4
2
1
1
2
2
3
2
143
-7
7
1
1
1
0
0
2
0
5
4
2
1
1
2
2
3
2
+1.5V
UNITS
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
MHz
ns
37