is45s32200e Integrated Silicon Solution, Inc., is45s32200e Datasheet - Page 36

• Manufacturer Part Number: is45s32200e
• Description: 512k Bits X 32 Bits X 4 Banks 64-mbit Synchronous Dynamic Ram
• Manufacturer: Integrated Silicon Solution, Inc.

IS45S32200E
AC ELECTRICAL CHARACTERISTICS
Notes:
1. An initial pause of 100us is required after power up, followed by two AUTO REFRESH commands, before proper device
2. Measured with t
3. The reference level is 1.5V when measuring input signal timing. Rise/fall times are measured between V
4. Access time is measured at 1.5V with the load shown in the figure below.
5. The time t
6. CLK must be toggled a minimum of two times during this period.
36
Symbol
t
t
t
t
t
t
t
t
t
DPL3
DPL2
DAL3
DAL2
T
WR
XSR
RFC
REF
operation is ensured. (V
two AUTO REFRESH command wake-ups should be repeated anytime the t
(max.).
when the output is in the high impedance state.
Parameter
Input Data To Precharge
Command Delay time
Input Data To Active / Refresh
Command Delay time (During Auto-Precharge)
Transition Time
Write Recovery Time
Exit Self Refresh and Active Command
Auto Refresh Period
Refresh Cycle Time (4096) for temperature grade A1
Refresh Cycle Time (4096) for temperature grade A2
HZ
(max.) is defined as the time required for the output voltage to transition by ± 200 mV from V
T
= 0.5 ns.
(2)
DD
and V
DDQ
must be powered up simultaneously. GND and GNDQ must be at same potential.) The
Condition
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
(6)
(1,2,3)
Integrated Silicon Solution, Inc. — www.issi.com
REF
refresh requirement is exceeded.
1CLK+6ns —
2CLK+t
2CLK+t
2CLK
2CLK
Min.
0.3
70
60
—
—
RP
RP
-6
Max.
1.2
—
—
—
—
—
—
64
—
1CLK+7ns —
2CLK+t
2CLK+t
OH
2CLK
2CLK
IH
Min.
0.3
70
70
—
—
(min.) and V
(min.) or V
RP
RP
-7
Max.
1.2
—
—
—
—
—
—
64
16
OL
IL
Units
(max.)
02/07/08
ms
ms
t
ns
ns
ns
ns
ns
ns
ns
Rev. A
CK