m29f400b-120n6tr STMicroelectronics, m29f400b-120n6tr Datasheet - Page 27

• Manufacturer Part Number: m29f400b-120n6tr
• Description: 4 Mbit 512kb X8 Or 256kb X16, Boot Block Single Supply Flash Memory
• Manufacturer: STMicroelectronics

M29F400BT, M29F400BB
7
Program and erase times and endurance cycles
The Program and Erase times and the number of Program/ Erase cycles per block are
shown in
Table 8.
1. T
2. T
Chip Erase (All bits in the memory set to ‘0’)
Chip Erase
Block Erase (64 Kbytes)
Program (Byte or Word)
Chip Program (Byte by Byte)
Chip Program (Word by Word)
Program/Erase Cycles (per Block)
A
A
= 0 to 70°C, –40 to 85°C or –40 to 125°C
= 25°C, V
Table
Program/ Erase times endurance cycles
CC
8. Exact erase times may change depending on the memory array condition.
Parameter
= 5V.
Program and erase times and endurance cycles
100,000
Min
Typ
1.5
0.6
4.5
2.3
5
8
(2)
(1)
100k W/E Cycles
Typical after
1.5
0.6
4.5
2.3
(2)
5
8
Max
150
20
18
4
9
cycles
Unit
27/40
µs
s
s
s
s
s