lh28f160bg-tl Sharp Microelectronics of the Americas, lh28f160bg-tl Datasheet - Page 25
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lh28f160bg-tl
Manufacturer Part Number
lh28f160bg-tl
Description
M-bit Smart Flash Memories
Manufacturer
Sharp Microelectronics of the Americas
Datasheet
1.LH28F160BG-TL.pdf
(36 pages)
6.2.3 DC CHARACTERISTICS (contd.)
NOTES :
1. All currents are in RMS unless otherwise noted. Typical
2. I
3. Includes RY/BY#.
4. Block erases and word writes are inhibited when V
SYMBOL
V
V
V
V
V
V
V
V
V
V
IL
IH
OL
OH1
OH2
PPLK
PPH1
PPH2
LKO
HH
values at V
These currents are valid for all product versions
(packages and speeds).
selected. If reading or word writing in erase suspend
mode, the device’s current draw is the sum of I
I
V
(max.) and V
V
CCES
CCWS
PPLK
PPH2
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage (TTL)
Output High Voltage (CMOS)
V
Normal Operations
V
Block Erase Operations
V
Block Erase Operations
V
RP# Unlock Voltage
, and not guaranteed in the range between V
and I
(min.), and above V
PP
PP
PP
CC
and I
Lockout Voltage during
Voltage during Word Write or
Voltage during Word Write or
Lockout Voltage
CCR
CC
CCES
PPH1
= 3.0 V, V
or I
PARAMETER
CCW
are specified with the device de-
(min.), between V
, respectively.
PPH2
PP
= 3.0 V and T
(max.).
PPH1
A
(max.) and
NOTE
= +25˚C.
CCWS
3, 7
3, 7
3, 7
4, 7
8, 9
7
7
PP
PPLK
or
≤
- 25 -
0.85V
0.7V
V
–
MIN.
11.4
11.4
CC
0.5
2.7
1.3
0.5
= 2.7 to 3.6 V
CC
CC
5. Automatic Power Saving (APS) reduces typical I
6. CMOS inputs are either V
7. Sampled, not 100% tested.
8. Boot block erases and word writes are inhibited when
9. RP# connection to a V
3 mA at 2.7 V V
inputs are either V
the corresponding RP# = V
and word write operations are not guaranteed with V
RP# < V
maximum cumulative period of 80 hours.
V
CC
MAX.
12.6
12.6
0.8
0.4
1.5
3.6
+0.3
HH
and should not be attempted.
UNIT
V
V
V
V
V
V
V
V
V
V
CC
IL
in static operation.
V
I
V
I
V
I
Block Erase and Word Write
for Boot Blocks
or V
LH28F160BG-TL/BGH-TL
OL
OH
OH
CC
CC
CC
= 2.0 mA
=
=
IH
= V
= V
= V
CC
HH
.
–
–
IH
2.0 mA
100 µA
±0.2 V or GND±0.2 V. TTL
CC
CC
CC
or WP# = V
CONDITIONS
supply is allowed for a
Min.
Min.
Min.
TEST
IL
. Block erase
CCR
IH
to
<