cy62167e Cypress Semiconductor Corporation., cy62167e Datasheet - Page 3

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cy62167e

Manufacturer Part Number
cy62167e
Description
16-mbit 1m X 16 / 2m X 8 Static Ram
Manufacturer
Cypress Semiconductor Corporation.
Datasheet

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Document #: 001-15607 Rev. *A
Maximum Ratings
Exceeding the maximum ratings may shorten the battery life
of the device. User guidelines are not tested.
Storage Temperature ................................ –65°C to + 150°C
Ambient Temperature with
Power Applied............................................ –55°C to + 125°C
Supply Voltage to Ground
Potential ........................................................... –0.5V to 6.0V
DC Voltage Applied to Outputs
in High-Z State
Electrical Characteristics
Over the Operating Range
Capacitance
Thermal Resistance
Notes
V
V
V
V
I
I
I
I
C
C
5. V
6. V
7. Full Device AC operation is based on a 100 µs ramp time from 0 to V
8. Under DC conditions the device meets a V
9. Only chip enables (CE
10. Tested initially and after any design or process changes that may affect these parameters.
IX
OZ
CC
SB2
Parameter
Parameter
Parameter
OH
OL
IH
IL
IN
OUT
left floating.
[9]
IL
IH
Θ
Θ
(min) = –2.0V for pulse durations less than 20 ns.
(max) = V
JA
JC
CC
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
V
Current
Automatic CE Power Down
Current—CMOS Inputs
Input Capacitance
Output Capacitance
Thermal Resistance
(junction to ambient)
Thermal Resistance
(junction to case)
[5, 6]
CC
[10]
+ 0.75V for pulse durations less than 20 ns.
Operating Supply
........................................... –0.5V to 6.0V
1
Description
Description
Description
and CE
[10]
2
), byte enables (BHE and BLE) and BYTE need to be tied to CMOS levels to meet the I
IL
of 0.8V. However, in dynamic conditions Input LOW Voltage applied to the device must not be higher than 0.7V.
I
I
V
V
GND < V
GND < V
f = f
f = 1 MHz
CE
V
f = 0, V
T
V
Still air, soldered on a 3 × 4.5 inch, two-layer printed circuit
board
OH
OL
A
CC
CC
CC
IN
= 25°C, f = 1 MHz,
1
= 2.1mA
MAX
= –1.0 mA
> V
= V
= 4.5V to 5.5V
= 4.5V to 5.5V
> V
CC
CC
CC(typ)
CC
= 1/t
I
O
< V
= V
– 0.2V or V
< V
– 0.2V or CE
RC
CC
Test Conditions
CC
CC(max)
CC
(min) and 200 µs wait time after V
, Output Disabled
V
I
CMOS levels
OUT
Test Conditions
Test Conditions
CC
IN
DC Input Voltage
Output Current into Outputs (LOW) ............................ 20 mA
Static Discharge Voltage........................................... >2001V
(MIL-STD-883, Method 3015)
Latch Up Current ..................................................... >200 mA
Operating Range
CY62167ELL
2
< 0.2V,
= V
= 0 mA
< 0.2V,
Device
CC
(max)
[5, 6]
Industrial –40°C to +85°C 4.5V to 5.5V
CC
Range
........................................–0.5V to 6.0V
stabilization.
–0.5
Min
2.4
2.2
–1
–1
CY62167E MoBL
SB2
Temperature
Typ
/ I
Ambient
2.2
1.5
25
CCDR
45 ns
[4]
spec. Other inputs can be
TSOP I
V
Max
4.3
10
10
60
CC
0.7
Max
0.4
4.0
+1
+1
30
12
+ 0.5V
Page 3 of 12
[8]
V
CC
°C/W
°C/W
Unit
Unit
pF
pF
[7]
Unit
mA
mA
µA
µA
µA
V
V
V
V
®
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