cy62128ev30 Cypress Semiconductor Corporation., cy62128ev30 Datasheet - Page 4

• Manufacturer Part Number: cy62128ev30
• Description: Mobl 1 Mbit 128k X 8 Static Ram
• Manufacturer: Cypress Semiconductor Corporation.

Capacitance
(For all packages)
Thermal Resistance
Data Retention Characteristics
(Over the Operating Range)
Note
Document #: 38-05579 Rev. *D
C
C
V
I
t
t
8. Tested initially and after any design or process changes that may affect these parameters.
9. Full device AC operation requires linear V
CCDR
CDR
R
Parameter
Parameter
DR
IN
OUT
[9]
Θ
Θ
[8]
[7]
JA
JC
OUTPUT
Parameter
INCLUDING
V
JIG AND
CC
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
SCOPE
V
Data Retention Current
Chip Deselect to Data Retention
Time
Operation Recovery Time
CC
[8]
Parameters
30 pF
for Data Retention
Description
R
V
R1
R2
TH
TH
R1
Description
Input Capacitance
Output Capacitance
R2
CC
Equivalent to:
Description
ramp from V
Still Air, soldered on a 3 x 4.5 inch,
two-layer printed circuit board
Figure 1. AC Test Loads and Waveforms
OUTPUT
V
CE
V
DR
Test Conditions
CC
IN
to V
1
> V
= 1.5V,
> V
Rise Time = 1 V/ns
CC(min)
CC
THEVENIN
CC
16667
15385
2.50V
8000
− 0.2V or V
1.20
> 100 μs or stable at V
− 0.2V or CE
T
V
GND
A
CC
V
= 25°C, f = 1 MHz,
CC
= V
EQUIVALENT
R
Conditions
CC(typ)
Test Conditions
TH
10%
IN
< 0.2V
2
< 0.2V,
ALL INPUT PULSES
CC(min)
V
90%
TSOP I
33.01
3.42
> 100 μs.
1103
1554
3.0V
1.75
645
Ind’l/Auto-A
Auto-E
48.67
25.86
SOIC
90%
10%
Max
Fall Time = 1 V/ns
Min
10
10
t
1.5
RC
0
CY62128EV30
STSOP
32.56
Typ
3.59
Unit
[3]
Ω
Ω
Ω
V
Max
Page 4 of 11
30
3
Unit
pF
pF
°C/W
°C/W
Unit
Unit
μA
μA
ns
ns
V
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