is43r16160 Integrated Silicon Solution, Inc., is43r16160 Datasheet - Page 6

• Manufacturer Part Number: is43r16160
• Description: 32mx8, 16mx16 256mb Synchronous Dram
• Manufacturer: Integrated Silicon Solution, Inc.

IS43R16160
6
DDR SDRAM (Rev.1.1)
IS43R83200B
IS43R16160B, IC43R16160B
I
COMMAND TRUTH TABLE
H=High Level, L=Low Level, V=Valid, X=Don't Care, n=CLK cycle number
Single Bank Precharge
Column Address Entry
Column Address Entry
Column Address Entry
Column Address Entry
Row Address Entry &
NOTE:
2. BA0-BA1 select either the Base or the Extended Mode Register (BA0 = 0, BA1 = 0 selects Mode Register;BA0=1 ,
1. Applies only to read bursts with autoprecharge disabled; this command is undefined (and should not be used) for
Precharge All Banks
Self-Refresh Entry
Mode Register Set
Auto-Precharge
Self-Refresh Exit
read bursts with autoprecharge enabled, and for write bursts.
BA1 = 0 selects Extended Mode Register; other combinations of BA0-BA1 are reserved; A0-A12 provide the
op-code to be written to the selected Mode Register.
Burst Terminate
Auto-Precharge
Bank Activate
No Operation
& Write with
Auto-Refresh
COMMAND
& Read with
Deselect
& Read
& Write
Preliminary
Preliminary
MNEMONIC
WRITEA
READA
REFSX
DESEL
WRITE
PREA
READ
REFA
REFS
TERM
NOP
ACT
PRE
MRS
CKE
n-1
H
H
H
H
H
H
H
H
H
H
H
L
L
H
H
CKE
X
X
H
H
H
H
H
H
H
H
L
H
H
H
H
n
256M Double Data Rate Synchronous DRAM
/CS
L
L
L
L
H
L
L
L
L
L
L
L
L
H
L
/RAS
X
H
L
L
L
H
H
H
H
L
L
X
H
H
L
/CAS
X
H
H
H
H
L
L
L
L
L
L
X
H
H
L
Zentel Electronics Corporation
/WE BA0,1
A3S56D30/40ETP
X
H
H
L
L
L
L
H
H
H
H
X
H
L
L
Integrated Silicon Solution, Inc.
X
X
V
V
X
V
V
V
V
X
X
X
X
X
L
A10
/AP
X
X
V
L
H
L
H
L
H
X
X
X
X
X
L
A0-9,
11-12
X
X
V
X
X
V
V
V
V
X
X
X
X
X
V
note
Rev. 00A
1
2
09/10/08