is42s16800al-7tli Integrated Silicon Solution, Inc., is42s16800al-7tli Datasheet - Page 9

• Manufacturer Part Number: is42s16800al-7tli
• Description: 128-mbit Low-power Synchronous Dram
• Manufacturer: Integrated Silicon Solution, Inc.

GENERAL DESCRIPTION
READ
The READ command selects the bank from BA0, BA1
inputs and starts a burst read access to an active row. Inputs
A0-A9 (x8); A0-A8 (x16); A0-A7 (x32) provides the starting
column location. When A10 is HIGH, this command func-
tions as an AUTO PRECHARGE command. When the auto
precharge is selected, the row being accessed will be
precharged at the end of the READ burst. The row will
remain open for subsequent accesses when AUTO
PRECHARGE is not selected. DQ’s read data is subject
to the logic level on the DQM inputs two clocks earlier. When
a given DQM signal was registered HIGH, the correspond-
ing DQ’s will be High-Z two clocks later. DQ’s will provide
valid data when the DQM signal was registered LOW.
WRITE
A burst write access to an active row is initiated with the
WRITE command. BA0, BA1 inputs selects the bank, and
the starting column location is provided by inputs A0-A9
(x8); A0-A8 (x16); A0-A7 (x32). Whether or not AUTO-
PRECHARGE is used is determined by A10.
The row being accessed will be precharged at the end of
the WRITE burst, if AUTO PRECHARGE is selected. If
AUTO PRECHARGE is not selected, the row will remain
open for subsequent accesses.
A memory array is written with corresponding input data on
DQ’s and DQM input logic level appearing at the same time.
Data will be written to memory when DQM signal is LOW.
When DQM is HIGH, the corresponding data inputs will be
ignored, and a WRITE will not be executed to that byte/
column location.
PRECHARGE
The PRECHARGE command is used to deactivate the open
row in a particular bank or the open row in all banks. BA0,
BA1 can be used to select which bank is precharged or they
are treated as “Don’t Care”. A10 determined whether one or
all banks are precharged. After executing this command,
the next command for the selected banks(s) is executed
after passage of the period t
for bank precharging. Once a bank has been precharged,
it is in the idle state and must be activated prior to any READ
or WRITE commands being issued to that bank.
AUTO PRECHARGE
The AUTO PRECHARGE function ensures that the precharge
is initiated at the earliest valid stage within a burst. This
function allows for individual-bank precharge without requir-
ing an explicit command.
PRECHARGE function in conjunction with a specific READ
or WRITE command. For each individual READ or WRITE
command, auto precharge is either enabled or disabled.
AUTO PRECHARGE does not apply except in full-page
IS42S81600AL, IS42S16800AL, IS42S32400AL
IS42LS81600AL, IS42LS16800AL, IS42LS32400AL
Integrated Silicon Solution, Inc. — www.issi.com —
PRELIMINARY
09/18/03
INFORMATION
RP
, which is the period required
A10 to enable the AUTO
Rev. 00A
burst mode. Upon completion of the READ or WRITE burst,
a precharge of the bank/row that is addressed is automati-
cally performed.
AUTO REFRESH COMMAND
This command executes the AUTO REFRESH operation.
The row address and bank to be refreshed are automatically
generated during this operation. The stipulated period (t
required for a single refresh operation, and no other com-
mands can be executed during this period. This command is
executed at least 4096 times for every 64ms. During an AUTO
REFRESH command, address bits are “Don’t Care”. This
command corresponds to CBR Auto-refresh.
BURST TERMINATE
The BURST TERMINATE command forcibly terminates the
burst read and write operations by truncating either fixed-
length or full-page bursts and the most recently registered
READ or WRITE command prior to the BURST TERMI-
NATE.
COMMAND INHIBIT
COMMAND INHIBIT prevents new commands from being
executed. Operations in progress are not affected, apart from
whether the CLK signal is enabled
NO OPERATION
When CS is low, the NOP command prevents unwanted
commands from being registered during idle or wait states.
LOAD MODE REGISTER
During the LOAD MODE REGISTER command the mode
register is loaded from A0-A11. This command can only be
issued when all banks are idle.
ACTIVE COMMAND
When the ACTIVE COMMAND is activated, BA0, BA1 inputs
selects a bank to be accessed, and the address inputs on A0-
A11 selects the row.
issued to the bank, the row remains open for accesses.
EXTENDED MODE REGISTER
The extended mode register defines low power functions.
During this command A0-A11 are data input pins. After power
on, the extended mode register set command must be ex-
ecuted to fix low power functions. During t CSR following this
command, they can not accept any other command. The
extended mode register has four fields:
• Options: A11-A7
• Drive Strength: A6-A5
• Temperature Compensated self Refresh: A4-A3
• Partial Array Self Refresh: A2-A0
Following extended mode register programming, no com-
mand can be issued before at least 2 CLK have elapsed.
1-800-379-4774
Until a PRECHARGE command is
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