at49bv001ant ATMEL Corporation, at49bv001ant Datasheet - Page 11

• Manufacturer Part Number: at49bv001ant
• Description: At49bv001a 1-megabit 128k X 8 Single 2.7-volt Battery-voltage Flash Memory
• Manufacturer: ATMEL Corporation

17. Program Cycle Characteristics
18. Program Cycle Waveforms
19. Sector or Chip Erase Cycle Waveforms
Notes:
3364D–FLASH–3/05
Symbol
t
t
t
t
t
t
t
t
BP
AS
AH
DS
DH
WP
WPH
EC
1. OE must be high only when WE and CE are both low.
2. For chip erase, the address should be 555. For sector erase, the address depends on what sector is to be erased.
3. For chip erase, the data should be 10H, and for sector erase, the data should be 30H.
(See note 4 under
Parameter
Byte Programming Time
Address Set-up Time
Address Hold Time
Data Set-up Time
Data Hold Time
Write Pulse Width
Write Pulse Width High
Erase Cycle Time
A0 - A16
A0 - A16
DATA
WE
OE
CE
(1)
t
“Command Definition Table” on page
AS
555
t
BYTE 0
AH
AA
t
t
DS
WP
AAA
t
BYTE 1
DH
55
555
t
WPH
BYTE 2
80
6.)
555
BYTE 3
AA
Min
40
40
30
30
0
0
AAA
BYTE 4
55
Typ
30
3
AT49BV001A(N)(T)
Note 2
BYTE 5
Note 3
t
EC
Max
50
5
seconds
Units
µs
ns
ns
ns
ns
ns
ns
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