cgd914mi NXP Semiconductors, cgd914mi Datasheet - Page 8

• Manufacturer Part Number: cgd914mi
• Description: Catv Amplifier Module
• Manufacturer: NXP Semiconductors

Philips Semiconductors
2001 Nov 01
handbook, halfpage
handbook, halfpage
860 MHz, 20 dB gain power doubler amplifier
Z
(1) V
(2) Typ. +3 .
Fig.14 Composite triple beat as a function of
Z
(1) V
(2) Typ. +3 .
Fig.16 Composite second order distortion (sum) as
S
S
CSO
CTB
(dB)
(dB)
= Z
= Z
50
60
70
80
90
50
60
70
80
90
o
o
L
L
.
.
= 75 ; V
= 75 ; V
0
0
frequency under flat conditions.
a function of frequency under flat
conditions.
200
200
B
B
= 24 V; 112 chs flat (50 to 750 MHz).
= 24 V; 112 chs flat (50 to 750 MHz).
(3) Typ.
(4) Typ. 3 .
(3) Typ.
(4) Typ. 3 .
400
400
600
600
800
800
f (MHz)
f (MHz)
(2)
MCD988
MCD990
(1)
(2)
(3)
(4)
(1)
(3)
(4)
1000
1000
(dBmV)
(dBmV)
48
44
40
36
32
48
44
40
36
32
V o
V o
8
handbook, halfpage
handbook, halfpage
Z
(1) V
(2) Typ. +3 .
Fig.15 Cross modulation as a function of frequency
Z
(1) V
(2) Typ. +3 .
Fig.17 Composite second order distortion (diff) as
X mod
S
S
(dB)
CSO
(dB)
= Z
= Z
100
60
70
80
90
50
60
70
80
90
o
o
L
L
.
.
0
= 75 ; V
= 75 ; V
0
under flat conditions.
a function of frequency under flat
conditions.
(2)
(3)
(4)
200
200
B
B
= 24 V; 112 chs flat (50 to 750 MHz).
= 24 V; 112 chs; flat (50 to 750 MHz).
(3) Typ.
(4) Typ. 3 .
(3) Typ.
(4) Typ. 3 .
CGD914; CGD914MI
400
400
600
600
Product specification
800
800
f (MHz)
f (MHz)
MCD989
MCD991
(1)
(1)
(2)
(3)
(4)
1000
1000
(dBmV)
48
44
40
36
32
(dBmV)
48
44
40
36
32
V o
V o