bgy135 NXP Semiconductors, bgy135 Datasheet - Page 4
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bgy135
Manufacturer Part Number
bgy135
Description
Vhf Power Amplifier Modules
Manufacturer
NXP Semiconductors
Datasheet
1.BGY135.pdf
(10 pages)
Philips Semiconductors
CHARACTERISTICS
Z
1996 May 08
f
I
P
H
H
VSWR
handbook, halfpage
S
Q2
L
VHF power amplifier modules
2
3
= Z
V
SYMBOL
S1
Fig.3
(W)
P L
L
= V
35
30
25
20
15
10
in
= 50 ; P
5
0
S2
0
= 12.5 V.
Load power as a function of drive power;
BGY135; typical values.
D
frequency
leakage current
load power
efficiency
second harmonic
third harmonic
input VSWR
stability
ruggedness
= 150 mW; V
BGY135
BGY136
100
PARAMETER
S1
200
= V
144 MHz
156 MHz
132 MHz
S2
P D (mW)
f =
= 12.5 V; T
MRC266
V
adjust P
adjust P
adjust P
adjust P
V
P
P
V
P
S1
S1
L
D
S1
L
= 2 to 20 W; VSWR = 3 : 1
< 25 W; VSWR = 50 : 1
300
= 0; P
= V
= V
300 mW;
S2
S2
D
D
D
D
h
CONDITIONS
for P
for P
for P
for P
= 25 C; unless otherwise specified.
D
= 10.8 to 15.6 V;
= 15.6 V duration 5 s;
= 0
L
L
L
L
4
= 18 W
= 18 W
= 18 W
= 18 W
handbook, halfpage
V
S1
Fig.4
(W)
P L
= V
30
20
10
0
S2
0
= 12.5 V.
Load power as a function of drive power;
BGY136; typical values.
132
146
18
38
MIN.
100
no degradation
BGY135; BGY136
45
1.5
TYP.
200
Product specification
156
174
1
3
f = 146 MHz
P D (mW)
25
25
60
MAX.
161 MHz
174 MHz
MRC261
300
MHz
MHz
mA
W
%
dBc
dBc
dBc
UNIT