bgy1816 NXP Semiconductors, bgy1816 Datasheet - Page 3

• Manufacturer Part Number: bgy1816
• Description: Uhf Amplifier Module
• Manufacturer: NXP Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
2000 Oct 17
handbook, halfpage
f
I
I
P
G
H
H
VSWR
B
SYMBOL
mb
S1
S2
L
2
3
UHF amplifier module
p
f = 1850 MHz; V
Fig.2
= 25 C; V
(dB)
G p
30
20
10
in
0
0
Power gain and efficiency as functions of
load power; typical values.
frequency
supply current
supply current
load power
power gain
efficiency
second harmonic
third harmonic
input VSWR
stability
reverse intermodulation
AM bandwidth
ruggedness
S1
S1
= 5 V; V
= 5 V; V
PARAMETER
10
S2
G p
S2
= 26 V; Z
= 26 V; P
S
20
= Z
L
L
= 50 ; T
= 16 W; Z
P L (W)
P
P
VSWR
P
P
f
corner frequency = 3 dB;
P
MGD187
i
VSWR
D
D
L
carrier
carrier
= f
mb
< 60 dBm
< 63 mW
c
30
= 25 C.
16 W; V
S
60
40
20
0
(%)
= 16 W; P
200 kHz
= 16 W; modulation = 20%
= Z
2 : 1 through all phases;
5 : 1 through all phases
CONDITIONS
L
= 50
S2
3
= 25 to 27 V
reverse
handbook, halfpage
unless otherwise specified.
f = 1850 MHz; V
(W)
Fig.3
P L
= 40 dBc;
30
20
10
0
0
Load power as a function of input power;
typical values.
S1
= 5 V; V
1805
16
24
30
2
MIN.
40
S2
no degradation
= 26 V; Z
80
430
TYP.
S
= Z
80
L
Product specification
= 50 ; T
P IN (mW)
1880
28
1.6 : 1
MAX.
35
40
60
53
BGY1816
MGD186
mb
120
= 25 C.
MHz
mA
mA
W
dB
%
dBc
dBc
dBc
dBc
MHz
UNIT