tl081iydt STMicroelectronics, tl081iydt Datasheet - Page 5

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tl081iydt

Manufacturer Part Number
tl081iydt
Description
General Purpose J-fet Single Operational Amplifier
Manufacturer
STMicroelectronics
Datasheet
TL081
Table 3.
1. The input bias currents are junction leakage currents which approximately double for every 10°C increase in the junction
Symbol
GBP
THD
temperature.
∅m
K
e
R
t
ov
r
n
i
Rise time (T
Overshoot (T
Gain bandwidth product (T
Input resistance
Total harmonic distortion (T
Equivalent input noise voltage
Phase margin
V
V
V
V
f= 1kHz, R
V
R
CC
o
in
in
in
S
= 2V
= 20mV, R
= 20mV, R
= 10mV, R
= 100Ω, f = 1KHz
= ±15V, T
pp
amb
L
amb
= 2kΩ ,C
= +25°C)
L
L
L
= +25°C)
amb
= 2kΩ , C
= 2kΩ , C
= 2kΩ , C
Parameter
= +25°C (unless otherwise specified) (continued)
L
= 100pF, A
L
L
L
amb
amb
= 100pF, unity gain
= 100pF, unity gain
= 100pF, f= 100kHz
= +25°C)
= +25°C),
v
= 20dB,
TL081I,M,AC,AI,AM
Min.
2.5
BC,BI,BM
Typ.
10
0.01
0.1
10
15
45
4
12
Max.
Min.
Electrical characteristics
2.5
TL081C
Typ.
10
0.01
0.1
10
15
45
4
12
Max.
degrees
Unit
MHz
----------- -
μs
nV
%
%
Ω
Hz
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