SI5475DC-T1 Vishay Intertechnology, SI5475DC-T1 Datasheet - Page 4

• Manufacturer Part Number: SI5475DC-T1
• Description: P-channel 12-V (d-s) Mosfet
• Manufacturer: Vishay Intertechnology

Si5475DDC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
0.8
0.7
0.6
0.5
0.4
0.3
0.2
10
- 50
1
0.0
- 25
Forward Diode Voltage vs. Temp.
0.2
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
T
J
= 150 °C
0.6
50
0.01
100
75
0.1
10
1
0.8
0.1
T
J
I
= 25 °C
D
100
* V
Safe Operating Area, Junction-to-Ambient
Single Pulse
= 250 µA
T
A
GS
Limited by R
1.0
= 25 °C
125
> minimum V
V
DS
New Product
- Drain-to-Source Voltage (V)
150
1.2
1
DS(on)
GS
BVDSS
Limited
*
at which R
10
DS(on)
1 ms
10 ms
100 ms
10 s
1 s
DC
0.10
0.08
0.06
0.04
0.02
0.00
50
40
30
20
10
is specified
0
10
0
-3
On-Resistance vs. Gate-to-Source Voltage
I
D
= 5.4 A
100
10
1
-2
V
GS
- Gate-to-Source Voltage (V)
Single Pulse Power
10
-1
2
Time (s)
1
T
S-82487-Rev. B, 13-Oct-08
T
Document Number: 68750
J
J
= 25 °C
= 125 °C
3
10
4
100
600
5