SI5475DC-T1 Vishay Intertechnology, SI5475DC-T1 Datasheet - Page 3

• Manufacturer Part Number: SI5475DC-T1
• Description: P-channel 12-V (d-s) Mosfet
• Manufacturer: Vishay Intertechnology

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68750
S-82487-Rev. B, 13-Oct-08
0.08
0.06
0.04
0.02
0.00
20
16
12
8
4
0
8
6
4
2
0
0.0
0
0
I
D
= 7.5 A
On Resistance vs. Drain Current
0.5
V
GS
V
DS
= 1.8 V
5
Output Characteristics
8
Q
- Drain-to-Source Voltage (V)
g
I
1.0
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
V
V
DS
V
GS
GS
= 6 V
1.5
10
16
= 4.5 V
= 2.5 V
V
GS
V
= 5 thru 2 V
DS
2.0
= 9.6 V
15
V
24
V
GS
GS
2.5
= 1.5 V
= 1 V
New Product
3.0
20
32
2500
2000
1500
1000
500
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
10
0
- 50
8
6
4
2
0
0.0
0
On-Resistance vs. Junction Temperature
- 25
C
rss
0.4
V
V
GS
T
Transfer Characteristics
DS
3
0
J
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
T
V
C
C
GS
oss
C
= 125 °C
25
Capacitance
T
0.8
iss
= 4.5 V, 2.5 V, I
C
= 25 °C
50
6
Vishay Siliconix
Si5475DDC
1.2
V
75
GS
D
= 1.8 V, I
= 5.4 A
T
www.vishay.com
C
100
9
= - 55 °C
1.6
D
125
= 2 A
150
2.0
12
3