adg5213bcpz-rl7 Analog Devices, Inc., adg5213bcpz-rl7 Datasheet - Page 6

• Manufacturer Part Number: adg5213bcpz-rl7
• Description: High Voltage Latch-up Proof, Quad Spst Switches Adg5212/adg5213
• Manufacturer: Analog Devices, Inc.

ADG5212/ADG5213
Parameter
POWER REQUIREMENTS
1
36 V SINGLE SUPPLY
V
Table 4.
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
Guaranteed by design; not subject to production test.
DD
Insertion Loss
C
C
C
I
V
Analog Signal Range
On Resistance, R
On-Resistance Match Between Channels, ∆R
On-Resistance Flatness, R
Source Off Leakage, I
Drain Off Leakage, I
Channel On Leakage, I
Input High Voltage, V
Input Low Voltage, V
Input Current, I
Digital Input Capacitance, C
t
t
Break-Before-Make Time Delay, t
Charge Injection, Q
Off Isolation
Channel-to-Channel Crosstalk
DD
ON
OFF
DD
S
D
D
= 36 V ± 10%, V
(Off)
(ADG5213 Only)
(Off)
(On), C
S
(On)
INL
ON
or I
INJ
D
SS
INL
INH
S
(Off)
D
INH
= 0 V, GND = 0 V, unless otherwise noted.
(Off)
(On), I
FLAT(ON)
1
IN
S
(On)
D
ON
25°C
150
170
1.6
8
35
50
0.01
0.1
0.01
0.1
0.02
0.2
0.002
3
190
230
175
215
45
−0.5
−105
−105
25°C
−11
3.5
5.5
9
40
−40°C to +85°C
215
9
60
0.2
0.2
0.25
255
230
−40°C to +85°C
Rev. 0 | Page 6 of 20
−40°C to +125°C
0 V to V
245
10
65
0.4
0.4
0.9
2.0
0.8
±0.1
265
245
25
−40°C to +125°C
65
9/40
DD
Unit
V max
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
μA typ
μA max
pF typ
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
Unit
dB typ
pF typ
pF typ
pF typ
μA typ
μA max
V min/V max
Test Conditions/Comments
V
see Figure 24
V
V
V
V
V
see Figure 23
V
see Figure 23
V
see Figure 26
V
R
V
R
V
R
V
V
see Figure 31
R
see Figure 25
R
Figure 27
S
DD
S
S
DD
S
S
S
IN
L
S
L
S
L
S1
S
L
L
= 0 V to 30 V, I
= 0 V to 30 V, I
= 0 V to 30 V, I
= 1 V/30 V, V
= 1 V/30 V, V
= V
= 300 Ω, C
= 18 V, see Figure 30
= 300 Ω, C
= 18 V, see Figure 30
= 300 Ω, C
= 18 V, R
= 50 Ω, C
= 50 Ω, C
Test Conditions/Comments
R
see Figure 28
V
V
V
V
Digital inputs = 0 V or V
GND = 0 V, V
= V
= V
= 32.4 V, V
=39.6 V, V
L
S
S
S
DD
= 50 Ω, C
= 6 V, f = 1 MHz
= 6 V, f = 1 MHz
= 6 V, f = 1 MHz
D
GND
S2
= 13.2 V
= 1 V/30 V,
= 18 V, see Figure 29
or V
S
L
L
= 0 Ω, C
L
L
L
= 5 pF, f = 1 MHz,
= 5 pF, f = 1 MHz,
SS
DD
= 35 pF
= 35 pF
= 35 pF
SS
L
D
D
= 0 V
= 5 pF, f = 1 MHz,
SS
= 0 V
S
S
S
= 30 V/1 V,
= 30 V/1 V,
= 0 V
= −1 mA,
= −1 mA
= −1 mA
L
= 1 nF,
DD