adg849 Analog Devices, Inc., adg849 Datasheet - Page 4

• Manufacturer Part Number: adg849
• Description: 3 V/5 V Cmos 0.5 ? Spdt/2 1 Mux In Sc70
• Manufacturer: Analog Devices, Inc.

ADG849
Table 2. V
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
1
2
The temperature range for the Y version is –40°C to +125°C.
Guaranteed by design, not subject to production test.
Analog Signal Range
On-Resistance (R
On-Resistance Match Between Channels
(∆R
On-Resistance Flatness (R
Source Off Leakage, I
Channel On Leakage, I
Input High Voltage, V
Input Low Voltage, V
Input Current
C
t
t
Break-Before-Make Time Delay, t
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
Bandwidth: –3 dB
Insertion Loss
THD + N
C
C
I
DD
ON
OFF
IN
S
D
, C
I
, Digital Input Capacitance
(Off )
INL
ON
S
)
or I
(On)
DD
INH
= 2.7 V to 3.6 V, GND = 0 V
ON
)
INL
S
INH
(Off )
D
, I
S
FLAT(ON)
(On)
2
)
BBM
1
+25°C
0.72
1.1
0.05
0.095
0.3
±0.1
±0.01
0.005
2.5
16
22
13
18
7
30
–64
–64
38
0.04
0.02
55
147
0.001
–40°C to
+85°C
1.1
0.11
24
20
Rev. 0| Page 4 of 12
–40°C to
+125°C
0 V to V
1.2
0.125
2.0
0.8
0.7
±0.1
26
22
1
1.0
DD
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
nA typ
nA typ
V min
V max
V max
µA typ
µA max
pF typ
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
MHz typ
dB typ
%
pF typ
pF typ
µA typ
µA max
Test Conditions/Comments
V
See Figure 15
V
V
V
V
V
see Figure 17
V
V
V
R
V
R
V
R
see Figure 19
V
R
see Figure 21
R
see Figure 22
R
R
R
Vs = 1 V p-p
f = 1 MHz
f = 1 MHz
V
Digital Inputs = 0 V or 3.6 V
L
L
L
L
L
L
L
L
S
S
S
DD
S
S
DD
DD
IN
S
S
S
DD
= 0 V to V
= 1.5 V, I
= 0 V to V
= 3 V/1 V, V
= V
= 50 Ω, C
= 1.5 V, see Figure 18
= 50 Ω, C
= 1.5 V, see Figure 18
= 50 Ω, C
= 0 V, R
= 50 Ω, C
= 50 Ω, C
= 50 Ω, C
= 50 Ω C
= 32 Ω, f = 20 Hz to 20 kHz,
= V
= 3.6 V
= 3 V to 3.6 V
= 2.7 V
= 3.6 V
D
INL
= 1 V, or V
or V
S
DS
= 0 Ω, C
L
L
L
L
L
L
L
DD
DD
= 5 pF, see Figure 23
= 35 pF
= 35 pF
= 35 pF, V
= 5 pF, f = 100 kHz,
= 5 pF, f = 100 kHz,
= 5 pF, see Figure 23
INH
= –100 mA
D
, I
, I
= 1 V/3 V, see Figure 16
DS
DS
S
= –100 mA
= –100 mA
= V
L
= 1 nF, see Figure 20
D
S1
= 3 V;
= V
S2
= 1.5 V,