adg452 Analog Devices, Inc., adg452 Datasheet - Page 6

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adg452

Manufacturer Part Number
adg452
Description
Lc2 Mos 5 ? R Spst Switches
Manufacturer
Analog Devices, Inc.
Datasheet

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ADG451/ADG452/ADG453
5 V DUAL SUPPLY
V
Table 3.
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
1
2
3
4
Temperature range for B version is −40°C to +85°C.
T
Tested with dual supplies.
Guaranteed by design, not subject to production test.
DD
MAX
Analog Signal Range
On Resistance (R
Source Off Leakage, I
Drain Off Leakage, I
Channel On Leakage, I
Input High Voltage, V
Input Low Voltage, V
Input Current, I
t
t
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
C
C
C
I
I
I
I
On Resistance Match Between Channels (ΔR
Break-Before-Make Time Delay, t
DD
SS
L
GND
ON
OFF
S
D
D
= +5 V, V
, C
= 70°C.
(OFF)
(OFF)
4
S
(ON)
SS
= −5 V, V
INL
ON
or I
2, 3
)
D
INL
S
INH
(OFF)
INH
(OFF)
D
, I
L
= +5 V, GND = 0 V. All specifications T
S
(ON)
4
D
(ADG453 Only)
ON
)
25°C
7
12
0.3
0.5
±0.02
±0.5
±0.02
±0.5
±0.04
±1
0.005
160
220
60
140
50
5
10
65
−76
48
48
148
0.0001
0.5
0.0001
0.5
0.0001
0.5
0.0001
0.5
B Version
Rev. C | Page 6 of 16
T
V
15
0.5
±2.5
±2.5
±5
2.4
0.8
±0.5
300
180
5
5
5
5
5
MIN
SS
to V
MIN
to T
1
DD
to T
MAX
MAX
Unit
V
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
μA typ
μA max
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
pF typ
pF typ
pF typ
μA typ
μA max
μA typ
μA max
μA typ
μA max
μA typ
μA max
, unless otherwise noted.
Test Conditions/Comments
V
V
V
V
V
V
R
R
R
V
R
R
f = 1 MHz
f = 1 MHz
f = 1 MHz
V
V
V
L
L
L
L
L
D
D
D
D
D
IN
S
DD
L
L
= 300 Ω, C
= 300 Ω, C
= 300 Ω, C
= 50 Ω, C
= 50 Ω, C
= 5.5 V
= 5.5 V
= 0 V, R
= −3.5 V to +3.5 V, I
= 3.5 V, I
= ±4.5, V
= 0 V, 5 V, V
= V
= V
= 5.5 V; digital inputs = 0 V or 5 V
S
INL
= 0 V, 5 V; see Figure 18
or V
S
S
= 0 Ω, C
S
L
L
= −10 mA
= ±4.5; see Figure 17
INH
L
L
L
= 5 pF, f = 1 MHz; see Figure 22
= 5 pF, f = 1 MHz; see Figure
S
= 35 pF, V
= 35 pF, V
= 35 pF, V
= 0 V, 5 V; see Figure 17
L
= 1.0 nF; see Figure 21
S
= −10 mA
S
S
S1
= 3 V; see Figure 19
= 3 V; see Figure 19
= V
S2
= 3 V; see Figure 20
23

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