adg452 Analog Devices, Inc., adg452 Datasheet - Page 5

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adg452

Manufacturer Part Number
adg452
Description
Lc2 Mos 5 ? R Spst Switches
Manufacturer
Analog Devices, Inc.
Datasheet

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12 V SINGLE SUPPLY
V
Table 2.
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
1
2
3
4
Temperature range for B version is −40°C to +85°C.
T
Tested with dual supplies.
Guaranteed by design, not subject to production test.
DD
MAX
Analog Signal Range
On Resistance (R
On Resistance Flatness (R
Source Off Leakage, I
Drain Off Leakage, I
Channel On Leakage, I
Input High Voltage, V
Input Low Voltage, V
Input Current, I
t
t
Charge Injection
Channel-to-Channel Crosstalk
C
C
C
I
I
I
On Resistance Match Between Channels (ΔR
Break-Before-Make Time Delay, t
DD
L
GND
ON
OFF
S
D
D
= 12 V, V
, C
= 70°C.
(OFF)
(OFF)
4
S
(ON)
SS
= 0 V, V
INL
ON
or I
2, 3
)
D
INL
INH
S
(OFF)
INH
L
(OFF)
D
= 5 V, GND = 0 V. All specifications T
, I
S
FLAT(ON)
(ON)
4
)
D
(ADG453 Only)
ON
)
25°C
6
8
0.1
0.5
1.0
±0.02
±0.5
±0.02
±0.5
±0.04
±1
0.005
100
220
80
160
15
10
10
−90
60
60
100
0.0001
0.5
0.0001
0.5
0.0001
0.5
B Version
Rev. C | Page 5 of 16
MIN
T
0 V to V
10
0.5
1.0
±2.5
±2.5
±5
2.4
0.8
±0.5
260
200
10
5
5
5
MIN
to T
to T
1
MAX
DD
MAX
, unless otherwise noted.
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
μA typ
μA max
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
pF typ
pF typ
pF typ
μA typ
μA max
μA typ
μA max
μA typ
μA max
Test Conditions/Comments
V
V
V
V
V
V
V
R
R
R
V
R
f = 1 MHz
f = 1 MHz
f = 1 MHz
V
V
V
D
D
D
D
D
D
IN
L
L
L
S
L
DD
L
L
see Figure 20
= 300 Ω, C
= 300 Ω, C
= 300 Ω, C
= 50 Ω, C
= 6 V, R
= 5.5 V
= 5.5 V
= 0 V to +10 V, I
= 10 V, I
= 0 V, 5 V, I
= 0 V, 10 V, V
= 0 V, 10 V, V
= V
= V
= 13.2 V; digital inputs = 0 V or 5 V
S
INL
ADG451/ADG452/ADG453
= 0 V, 10 V; see Figure 18
or V
S
S
= 0 Ω, C
L
= −10 mA
INH
L
L
L
= 5 pF, f = 1 MHz; see Figure
S
= 35 pF, V
= 35 pF, V
= 35 pF, V
= −10 mA
S
S
= 0 V, 10 V; see Figure 17
= 0 V, 10 V; see Figure 17
S
L
= −10 mA
= 1.0 nF; see Figure 21
S
S
S1
= 8 V; see Figure 19
= 8 V; see Figure 19
= V
S2
= 8 V;
23

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