nx3v1g66 NXP Semiconductors, nx3v1g66 Datasheet - Page 5

• Manufacturer Part Number: nx3v1g66
• Description: Low-voltage Analog Switch
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 8.
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see
[1]
[2]
NX3V1G66_2
Product data sheet
Symbol
R
R
Fig 5.
ON(peak)
ON(flat)
Typical values are measured at T
Flatness is defined as the difference between the maximum and minimum value of ON resistance measured at identical V
temperature.
V
Test circuit for measuring OFF-state leakage
current
V
I
Parameter
ON resistance
(peak)
ON resistance
(flatness)
Resistance R
IL
= 0.3 V or V
V I
11.1 Test circuits
11.2 ON resistance
I
S
E
Z
CC
ON
0.3 V; V
V
CC
Conditions
V
I
V
I
GND
SW
SW
I
I
V
V
V
V
V
V
V
V
= GND to V
= GND to V
amb
CC
CC
CC
CC
CC
CC
CC
CC
= 100 mA; see
= 100 mA
O
= V
Y
= 25 C.
= 1.4 V
= 1.65 V
= 2.3 V
= 2.7 V
= 1.4 V
= 1.65 V
= 2.3 V
= 2.7 V
CC
I
S
001aag488
0.3 V or 0.3 V.
CC
CC
;
;
V O
Figure 7
Rev. 02 — 28 July 2008
[2]
Fig 6.
T
amb
Min
-
-
-
-
-
-
-
-
= 40 C to +85 C T
V
Test circuit for measuring ON-state leakage
current
I
Typ
0.25
0.25
= 0.3 V or V
0.8
0.5
0.3
0.5
0.1
0.1
V
IH
[1]
V I
I
Max
0.45
S
1.9
0.8
0.5
1.7
0.6
0.2
0.2
CC
E
Z
0.3 V; V
amb
Low-voltage analog switch
V
CC
Min
GND
= 40 C to +125 C Unit
-
-
-
-
-
-
-
-
O
= open circuit.
NX3V1G66
Y
Figure 8
001aag489
© NXP B.V. 2008. All rights reserved.
V O
Max
2.1
0.9
0.6
0.5
1.8
0.7
0.2
0.2
to
CC
Figure
and
5 of 17
13.