m66255fp Renesas Electronics Corporation., m66255fp Datasheet - Page 3

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m66255fp

Manufacturer Part Number
m66255fp
Description
8192 ? 10-bit Line Memory Fifo
Manufacturer
Renesas Electronics Corporation.
Datasheet

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M66255FP
Absolute Maximum Ratings
Supply voltage
Input voltage
Output voltage
Power dissipation
Storage temperature
Note:
Recommended Operating Conditions
Supply voltage
Supply voltage
Operating ambient temperature
Electrical Characteristics
"H" input voltage
"L" input voltage
"H" output voltage
"L" output voltage
"H" input current
"L" input current
Off state "H" output current
Off state "L" output current
Operating mean current
dissipation
Input capacitance
Off state output capacitance
Function
When write enable input WE is "L", the contents of data inputs D
with rise edge of write clock input WCK. At this time, the write address counter is also incremented simultaneously.
The write functions given below are also performed in synchronization with rise edge of WCK.
When WE is "H", a write operation to memory is inhibited and the write address counter is stopped.
When write reset input WRES is "L", the write address counter is initialized.
When read enable input RE is "L", the contents of memory are output to data outputs Q
rise edge of read clock input RCK. At this time, the read address counter is also incremented simultaneously.
The read functions given below are also performed in synchronization with rise edge of RCK.
When RE is "H", a read operation from memory is inhibited and the read address counter is stopped. The outputs are in
the high impedance state.
When read reset input RRES is "L", the read address counter is initialized.
REJ03F0249-0200 Rev.2.00 Sep 14, 2007
Page 3 of 13
*
Ta ≥ 40°C are derated at −9.7 mW / °C
Item
Item
Item
V
V
V
Pd
Tstg
V
GND
Topr
V
V
V
V
I
I
I
I
I
C
C
IH
IL
OZH
OZL
CC
Symbol
CC
I
O
Symbol
CC
Symbol
IH
IL
OH
OL
I
O
V
CC
Min
2.0
− 0.8
−0.5 to V
−0.5 to V
Min
4.5
0
−0.5 to +7.0
−65 to 150
Ratings
825*
Typ
CC
CC
+ 0.5
+ 0.5
0
to D
Max
0.55
−1.0
−5.0
150
0.8
1.0
5.0
9
10
15
(Ta = 0 to 70°C, V
Typ
are written into memory in synchronization
5
0
(Ta = 0 to 70°C, unless otherwise noted)
Unit
mA
µA
µA
µA
µA
pF
pF
Unit
mW
V
V
V
V
°C
V
V
V
0
I
I
V
V
V
V
V
t
f = 1 MHz
f = 1 MHz
to Q
OH
OL
WCK
I
I
O
O
I
Max
= V
= GND
= V
CC
A value based on GND pin
Ta = 25°C
5.5
70
= 4 mA
= V
= GND
= −4 mA
, t
9
= 5 V ± 10%, GND = 0 V)
CC
CC
RCK
in synchronization with
CC
Test Conditions
, GND, Output open
= 30 ns
Conditions
WE, WRES, WCK,
RE, RRES, RCK,
D
WE, WRES, WCK,
RE, RRES, RCK,
D
0
0
to D
to D
9
9
Unit
°C
V
V

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