tp3032 Freescale Semiconductor, Inc, tp3032 Datasheet - Page 2

• Manufacturer Part Number: tp3032
• Description: Npn Silicon Rf Power Transistor
• Manufacturer: Freescale Semiconductor, Inc

ELECTRICAL CHARACTERISTICS — continued
DYNAMIC CHARACTERISTICS
FUNCTIONAL TESTS
TP3032
2
Output Capacitance
Common–Emitter Amplifier Gain
Load Mismatch
Collector Efficiency
Over Drive
(V CB = 26 V, I E = 0, f = 1 MHz )
(V CC = 26 V, P out = 21 W, I CQ = 100 mA, f = 960 MHz)
(V CC = 26 V, P out = 21 W, I CQ = 100 mA, Load VSWR = 5:1, at
All Phase Angles at Frequency of Test)
(V CC = 26 V, P out = 21 W, f = 960 MHz)
(V CC = 26 V, P in = 6 W, f = 960 MHz)
Characteristic
Figure 1. Series Equivalent Input and Output Impedances
Z OL * = Conjugate of optimum load impedance
Z OL * =
Z OL * =
(MHz)
860
880
900
935
960
980
f
into which the device operates at a given
output power, voltage, current and frequency.
Z in
(T C = 25°C unless otherwise noted.)
f = 860 MHz
V CE = 26 V
2.9 – j1.45
3.2 – j0.95
3.25 – j1.5
3.55 – j1.1
2.9 – j0.4
2.9 – j0.9
980
Z in
( )
Z o = 10
Symbol
C ob
OD
G p
f = 860 MHz
980
P out = 21 W
2.25 + j2.5
2.6 + j2.15
2.1 + j2.2
2.4 + j2.3
2 + j2.2
2.5 + j2
Z OL *
( )
Z OL *
Min
7.5
50
—
No Degradation in Output Power
No Degradation in Output Power
MOTOROLA RF DEVICE DATA
Typ
8.5
30
55
Max
—
—
—
Unit
pF
dB
%