tp3032 Freescale Semiconductor, Inc, tp3032 Datasheet

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tp3032

Manufacturer Part Number
tp3032
Description
Npn Silicon Rf Power Transistor
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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TP3032
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
amplifiers, for use in analog and digital systems.
REV 6
©
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
NOTE:
MOTOROLA RF DEVICE DATA
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector–Current — Continuous
Total Device Dissipation @ T C = 25 C
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case (1)
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Leakage
DC Current Gain
The TP3032 is designed for 26 volts, common emitter, 960 MHz base station
Motorola, Inc. 1994
Specified 26 Volts, 960 MHz Characteristics
Silicon Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to
Metal Migration
Class AB Operation
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
Derate above 25 C
(I C = 30 mA, R BE = 75 )
(I E = 5 mAdc)
(I C = 30 mAdc)
(V CE = 26 V, R BE = 75 )
(I C =1 Adc, V CE = 10 Vdc)
1. Thermal resistance is determined under specified RF operating condition.
Output Power — 21 Watts
Gain — 7.5 dB min
Rating
Characteristic
Characteristic
(T C = 25 C unless otherwise noted.)
Symbol
V CER
V CBO
V EBO
T stg
P D
I C
T J
– 65 to +150
Value
52.5
200
3.5
0.3
40
48
4
V (BR)CBO
V (BR)CER
V (BR)EBO
Symbol
I CER
h FE
Watts
W/ C
Unit
Vdc
Vdc
Vdc
Adc
C
C
Symbol
R JC
Min
3.5
40
48
15
RF POWER TRANSISTOR
Typ
CASE 319–07, STYLE 2
TP3032
21 W, 960 MHz
NPN SILICON
Max
3.3
Max
Order this document
80
8
by TP3032/D
(continued)
TP3032
Unit
Unit
Vdc
Vdc
Vdc
C/W
mA
1

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tp3032 Summary of contents

Page 1

... MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor The TP3032 is designed for 26 volts, common emitter, 960 MHz base station amplifiers, for use in analog and digital systems. Specified 26 Volts, 960 MHz Characteristics Output Power — 21 Watts Gain — 7.5 dB min Silicon Nitride Passivated ...

Page 2

... Collector Efficiency ( out = 960 MHz) Over Drive ( 960 MHz Conjugate of optimum load impedance Figure 1. Series Equivalent Input and Output Impedances TP3032 25°C unless otherwise noted.) Symbol Min C ob — ...

Page 3

... Figure 4. Output Power versus Frequency 100 960 MHz SUPPLY VOLTAGE (VOLTS) + – RF OUTPUT 50 C6 Chip Resistor 1206 Trimmer Resistor 1/4 W, Resistor 100 mA 920 940 960 980 1000 f, FREQUENCY (MHz TP3032 3 ...

Page 4

... C 0.230 0.260 5.85 6.60 D 0.115 0.125 2.93 3.17 E 0.102 0.114 2.59 2.90 F 0.075 0.085 1.91 2.15 H 0.160 0.170 4.07 4.31 J 0.004 0.006 0.11 0.15 K 0.090 0.110 2.29 2.79 L 0.725 BSC 18.42 BSC N 0.225 0.241 5.72 6.12 Q 0.125 0.135 3.18 3.42 STYLE 2: PIN 1. EMITTER (COMMON) 2. BASE (INPUT) 3. EMITTER (COMMON) 4. EMITTER (COMMON) 5. COLLECTOR (OUTPUT) 6. EMITTER (COMMON) *TP3032/D* TP3032/D MOTOROLA RF DEVICE DATA ...

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