rh80p6fsy3 STMicroelectronics, rh80p6fsy3 Datasheet
rh80p6fsy3
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rh80p6fsy3 Summary of contents
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... Space flights parts (full ESCC flow screening) November 2007 P-channel 60V - 0.021Ω - TO-254AA V DSS Figure 1. Marking Package RH80P6FSY1 TO-254AA RH80P6FSY3 TO-254AA Rev 3 STRH80P6FSY1 STRH80P6FSY3 TO-254AA Internal schematic diagram Packaging Individual strip pack Individual strip pack www.st.com 1/13 13 ...
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... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Pre-irradiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Post-irradiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.3 Electrical characteristics (curves) 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 STRH80P6FSY3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 ...
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... STRH80P6FSY3 1 Electrical ratings Table 2. Absolute maximum ratings (pre-irradiation) Symbol V Drain-source voltage ( Gate-source voltage GS (1) I Drain current (continuous (1) I Drain current (continuous (2) I Drain current (pulsed) DM (1) P Total dissipation at T TOT (3) Peak diode recovery voltage slope dv/dt T Storage temperature stg T Max ...
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... V, f=1 MHz = f=1MHz Gate DC Bias=0 Test signal level=20 mV open drain Parameter Test conditions 4.7 Ω STRH80P6FSY3 Min. Typ. ± 100 0.021 0.024 D Min. Typ. Max 6800 8500 10200 1216 1521 1825 ...
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... STRH80P6FSY3 Table 8. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µ ...
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... Energy (MeV) 34 316 55.9 459 Parameter Test conditions di/dt = 100 A/µ 25° di/dt = 100 A/µ 150°C DD STRH80P6FSY3 V (V) @V Range (µ Min. Typ. Max Unit 80 320 = 0 1.1 GS 280 350 420 5.4 31 368 460 ...
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... STRH80P6FSY3 2.3 Electrical characteristics (curves) Figure 3. Safe operating area Figure 5. Output characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Electrical characteristics Figure 4. Thermal impedance Figure 6. Transfer characteristics Capacitance variations 7/13 ...
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... Electrical characteristics Figure 9. Normalized BV DSS Figure 11. Normalized gate threshold voltage vs temperature Figure 13. Source drain-diode forward characteristics 8/13 vs temperature Figure 10. Static drain-source on resistance Figure 12. Normalized on resistance vs STRH80P6FSY3 temperature ...
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... STRH80P6FSY3 3 Test circuit Figure 14. Switching times test circuit for resistive load 1. Max driver V slope = 1V/ns (no DUT) GS Figure 15. Unclamped inductive load test circuit (single pulse and repetitive) Test circuit (1) 9/13 ...
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... These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK trademark. ECOPACK specifications are available at: 10/13 www.st.com STRH80P6FSY3 ...
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... STRH80P6FSY3 Table 12. TO-254AA mechanical data DIM. A 13.59 B 13.59 C 20. 16. 12. Mechanical drawing mm. MIN. TYP MAX. 13.84 13.84 20.32 6.32 6.60 1.02 1.27 3.53 3.78 17.40 6.86 0.89 1.14 3.81 3.81 14.50 3.05 0.71 1.0 1.65 Package mechanical data inch MIN. TYP. MAX. 0.535 0.545 0.535 0.545 0.790 0.80 0.249 0.260 0.040 0.050 0.139 0.149 0.665 0.685 0.270 0.035 ...
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... Revision history 5 Revision history Table 13. Document revision history Date 18-Dec-2006 19-Mar-2007 20-Nov-2007 12/13 Revision 1 First release 2 Complete version Note 2 on device summary has been updated Added figures: 2 and 15. 3 Updated values on tables Minor text changes to improve readability STRH80P6FSY3 Changes 8 and 11 ...
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... STRH80P6FSY3 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...