TFF1018HN/N1,135 NXP Semiconductors, TFF1018HN/N1,135 Datasheet - Page 6

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TFF1018HN/N1,135

Manufacturer Part Number
TFF1018HN/N1,135
Description
Specifications: RF Type: Ku-Band ; Package / Case: 16-VFQFN Exposed Pad ; Frequency: 10.7GHz ~ 12.75GHz ; Packaging: Tape & Reel (TR) ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
13. Application information
TFF1018HN
Product data sheet
Fig 4.
H
V
Application diagram of TFF1018HN/N1
GH
GV
Table 8.
See
Netname
GH
DH
GV
DV
G2
D2
HB
LB
Figure
DH
DV
4.
List of netnames
All information provided in this document is subject to legal disclaimers.
G2
Description
Gate voltage of 1st stage LNA. Horizontal polarization
Drain voltage of 1st stage LNA. Horizontal polarization
Gate voltage of 1st stage LNA. Vertical polarization
Drain voltage of 1st stage LNA. Vertical polarization
Gate voltage of 2nd stage LNA
Drain voltage of 2nd stage LNA
High band oscillator supply control
Low band oscillator supply control
Rev. 2 — 7 December 2011
GH
D2
DH
GV
V/T detector
pHemt bias
DV
RF_GND1
RF_GND2
G2
GND1
Integrated mixer oscillator PLL for satellite LNB
n.c.
n.c.
D2
RF
1 μF
HB
2
3
4
5
6
7
LB
1
8
100 nF
16
220 pF
9
5 V
15
14
13
12
10
11
330 Ω
IF_GND
IF
GND2
XO1
XO2
HB
REGULATOR
5 V LINEAR
1 μF
TFF1018HN
100 pF
25 MHz
crystal
9 V ~ 21 V
© NXP B.V. 2011. All rights reserved.
aaa-000010
IF
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