tda8751t NXP Semiconductors, tda8751t Datasheet - Page 6

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tda8751t

Manufacturer Part Number
tda8751t
Description
Qpsk Receiver
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
CHARACTERISTICS
Measured in application circuit with the following conditions: V
unless otherwise specified.
1999 Aug 20
Supplies
V
I
V
I
V
I
V
I
V
I
V
Low noise amplifier: R
V
V
f
R
C
R
NF
V
G
V
IM3
CCA1
CCA2
CCA3
cc(o)
CCD
i
SYMBOL
V
CCA1
CCA2
CCA3
cc(o)
CCD
CC(tune)
I(DC)
i
i
i
LLNA
leak(LO)
o
QPSK receiver
LNA
o
LNA
analog supply voltage
analog supply current
analog supply voltage
analog supply current
analog supply voltage
analog supply current
output supply voltage
output supply current
digital supply voltage
digital supply current
tuning supply voltage
DC input level
input level
input carrier frequency
input resistance
input capacitance
input return loss
noise figure
LO leakage on pin at LNA_IN
LNA gain
output level
output flatness
3rd-order intermodulation
PARAMETER
s
= 75 /R
i
= 75
unless otherwise specified
internally set
f
pin LNA_OUT connected to
DEMOD_IN
f
pin LNA_OUT connected to
DEMOD_IN
f = 100 MHz;
V
in 1 MHz bandwidth;
V
44 to 70 MHz;
V
70 to 130 MHz;
V
2 carriers at +10 dBmV each
N
LO/2
I(LNA)
I(LNA)
I(LNA)
I(LNA)
at pin LNA_IN
at 103 to 105 MHz
LO
= 70
= 140
= 0 dBmV
= 0 dBmV
= 0 dBmV
= 0 dBmV
CONDITIONS
130 MHz;
6
860 MHz;
CC
= 5 V; T
amb
4.75
4.75
4.75
4.75
4.75
44
8
= 25 C. All AC units are RMS values,
30
20
MIN.
TYP.
5
23
5
18
5
29
5
17
5
13
0.85
75
2.5
7
10
0.25 0.5
0.50
1.3
15
35
5.25
5.25
5.25
5.25
5.25
30
0
130
11
+10
1.5
15
30
60
Product specification
MAX.
TDA8051
V
mA
V
mA
V
mA
V
mA
V
mA
V
V
dBmV
MHz
pF
dB
dB
dBmV
dBmV
dB
dBmV
dB
dB
dB
dBc
UNIT

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