m48t35av STMicroelectronics, m48t35av Datasheet - Page 8

• Manufacturer Part Number: m48t35av
• Description: 3.3v, 256kbit 32kbit X 8 Timekeeper Sram
• Manufacturer: STMicroelectronics

2
Note:
2.1
8/28
Operation modes
As
oscillator of the M48T35AV are integrated on one silicon chip. The two circuits are
interconnected at the upper eight memory locations to provide user accessible
BYTEWIDE™ clock information in the bytes with addresses 7FF8h-7FFFh.
The clock locations contain the year, month, date, day, hour, minute, and second in 24 hour
BCD format. Corrections for 28, 29 (leap year - valid until 2100), 30, and 31 day months are
made automatically. Byte 7FF8h is the clock control register. This byte controls user access
to the clock information and also stores the clock calibration setting.
The eight clock bytes are not the actual clock counters themselves; they are memory
locations consisting of BiPORT™ READ/WRITE memory cells. The M48T35AV includes a
clock control circuit which updates the clock bytes with current information once per second.
The information can be accessed by the user in the same manner as any other location in
the static memory array.
The M48T35AV also has its own Power-fail Detect circuit. The control circuitry constantly
monitors the single 3V supply for an out of tolerance condition. When V
tolerance, the circuit write protects the SRAM, providing a high degree of data security in the
midst of unpredictable system operation brought on by low V
Battery Back-up Switchover Voltage (V
maintains data and clock operation until valid power returns.
Table 2.
1. See
X = V
Read mode
The M48T35AV is in the READ Mode whenever W (WRITE Enable) is high and E (Chip
Enable) is low. The unique address specified by the 15 address inputs defines which one of
the 32,768 bytes of data is to be accessed. Valid data will be available at the Data I/O pins
within Address Access time (t
that the E and G access times are also satisfied.
If the E and G access times are not met, valid data will be available after the latter of the
Chip Enable Access time (t
Deselect
WRITE
READ
READ
Deselect
Deselect
Mode
Figure 4 on page 7
IH
Table 11 on page 21
or V
IL
Operating modes
; V
V
SO
SO
3.0 to 3.6V
to V
= Battery back-up switchover voltage.
V
V
PFD
SO
CC
shows, the static memory array and the quartz controlled clock
for details.
(1)
(min)
ELQV
AVQV
(1)
) or Output Enable Access time (t
) after the last address input signal is stable, providing
V
V
V
V
X
X
IH
IL
IL
IL
SO
E
), the control circuitry connects the battery which
X
X
V
V
X
X
IL
IH
G
X
V
V
V
X
X
IL
IH
IH
W
CC
High Z
D
D
High Z
High Z
High Z
DQ0-DQ7
. As V
IN
OUT
GLQV
CC
).
CC
falls below the
Standby
Active
Active
Active
CMOS standby
Battery back-up
mode
is out of
Power