m4t28-br12sh6tr STMicroelectronics, m4t28-br12sh6tr Datasheet - Page 5

• Manufacturer Part Number: m4t28-br12sh6tr
• Description: 64 Kbit 8kb X8 Timekeeper Sram With Address/data Multiplexed
• Manufacturer: STMicroelectronics

Table 7. Power Down/Up Trip Points DC Characteristics
(T
Note: 1. All voltages referenced to V
Table 8. Power Down/Up AC Characteristics
(T
Note: 1. V
Figure 5. Power Down/Up Mode AC Waveforms
A
A
Symbol
t
V
DR
Symbol
= 0 to 70 ° C)
= 0 to 70 ° C)
V
2. At 25° C.
t
2. V
PFD
SO
t
FB
t
t
F
t
REC
(2)
PD
t
RB
R
es V
(1)
(2)
PFD
PFD
V CC
V PFD (max)
V PFD (min)
V SO
RST
INPUTS
OUTPUTS
PFD
(max) to V
(min) to V
Power-fail Deselect Voltage
Battery Back-up Switchover Voltage
Expected Data Retention Time
(min).
E at V
V
V
V
V
V
PFD
PFD
PFD
SS
PFD
SS
PFD
to V
tPD
(min) to V
(max) to V
(min) to V
(max) to RST High
IH
fall time of less than t
(min) fall time of less than t
(PER CONTROL INPUT)
PFD
before Power Down
VALID
RECOGNIZED
(min) V
SS
SS
PFD
tF
.
PFD
Parameter
V
(max) V
CC
CC
(min) V
Fall Time
Rise Time
FB
Parameter
may cause corruption of RAM data.
CC
CC
tFB
F
Rise Time
Fall Time
may result in deselection/write protection not occurring until 200µs after V
tDR
(1)
DON'T CARE
HIGH-Z
Min
4.2
7
tRB
Min
300
10
10
40
0
1
4.35
Typ
3.0
tR
(PER CONTROL INPUT)
Max
200
tREC
Max
RECOGNIZED
4.5
VALID
AI01384D
M48T559Y
YEARS
Unit
ms
µs
µs
µs
µs
µs
Unit
CC
V
V
pass-
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