74hct1g86gv NXP Semiconductors, 74hct1g86gv Datasheet - Page 5

• Manufacturer Part Number: 74hct1g86gv
• Description: 2-input Exclusive-or Gate
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 7.
Voltages are referenced to GND (ground = 0 V). All typical values are measured at T
11. Dynamic characteristics
Table 8.
GND = 0 V; t
[1]
[2]
74HC_HCT1G86_4
Product data sheet
Symbol
I
C
Symbol Parameter
For type 74HC1G86
t
C
For type 74HCT1G86
t
C
CC
pd
pd
I
I
PD
PD
CC
t
C
P
f
f
C
V
pd
i
o
D
CC
PD
= input frequency in MHz
L
= output frequency in MHz
(C
is the same as t
= output load capacitance in pF
= C
is used to determine the dynamic power dissipation P
= supply voltage in Volts
L
propagation delay A and B to Y; see
power dissipation
capacitance
propagation delay A and B to Y; see
power dissipation
capacitance
PD
V
Static characteristics
Dynamic characteristics
Parameter
supply current
additional supply
current
input capacitance
r
CC
= t
V
2
CC
f
f
2
o
6.0 ns; All typical values are measured at T
) = sum of outputs
PLH
f
i
+
and t
(C
L
PHL
Conditions
V
V
I
I
V
V
V
V
V
V
V
.
= GND to V
= GND to V
CC
CC
CC
CC
CC
CC
CC
…continued
2
Conditions
V
V
per input; V
V
= 2.0 V; C
= 4.5 V; C
= 5.0 V; C
= 6.0 V; C
= 4.5 V; C
= 5.0 V; C
I
CC
I
f
= V
= V
o
) where:
= 5.5 V
CC
CC
CC
CC
or GND; I
L
L
L
L
L
L
2.1 V; I
CC
Figure 5
Figure 5
= 50 pF
= 50 pF
= 15 pF
= 50 pF
= 50 pF
= 15 pF
1.5 V
= 4.5 V to 5.5 V;
Rev. 04 — 20 July 2007
O
O
D
= 0 A
= 0 A;
( W).
amb
[1]
[2]
[1]
[2]
= 25 C. For test circuit see
74HC1G86; 74HCT1G86
Min
Min
-
-
-
-
-
-
-
-
-
-
-
40 C to +85 C
40 C to +85 C
Typ
1.5
Typ
-
-
22
11
23
13
10
23
9
9
amb
Max
500
= 25 C.
10
-
Max
115
2-input EXCLUSIVE-OR gate
23
20
23
-
-
-
-
Figure 6
Min
40 C to +125 C
-
-
-
40 C to +125 C Unit
Min
-
-
-
-
-
-
-
-
© NXP B.V. 2007. All rights reserved.
Max
850
20
Max
-
135
27
23
27
-
-
-
-
Unit
pF
5 of 11
ns
ns
ns
ns
pF
ns
ns
pF
A
A