nbsg53a ON Semiconductor, nbsg53a Datasheet - Page 10

• Manufacturer Part Number: nbsg53a
• Description: 2.5v/3.3v Sige Selectable Differential Clock And Data D Flip-flop/clock Divider With Reset And Ols
• Manufacturer: ON Semiconductor

NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
30. Measured using a 500 mV source, 50% duty cycle clock source. Repetitive 1010 input data pattern. All outputs loaded with 50 W to
31. See Figure 14. t
32. V
33. See Figure 10. Duty Cycle % vs. Frequency.
34. For all OLS Configuration.
**When an output level of 400 mV is desired and V
***The device packaged in FCBGA−16 have maximum ambient temperature specification of 70°C and devices packaged in QFN−16 have
Table 11. AC CHARACTERISTICS for QFN−16
V
Symbol
maximum ambient temperature specification of 85°C.
f
t
t
t
t
V
t
t
t
t
t
max
PLH
PHL
SKEW
JITTER
r
f
s
h
rr
CC
INPP
V
CC
INPP
,
= 0 V; V
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
− 2.0 V. Input edge rates is 40 ps (20% − 80%).
(MAX) cannot exceed V
Maximum Frequency
(See Figures 4, 6, 8, 10, and 11)
(See Figures 5, 7, 9, 10, and 11)
(Note 30)
Propagation Delay to Output Differential
Duty Cycle Skew (Notes 31 and 33) DFF
RMS Random Clock Jitter
(See Figures 4 and 6) (Note 30)
Peak−to−Peak Data Dependent Jitter
Input Voltage Swing/Sensitivity
(Differential Configuration) (Note 32)
Output Rise/Fall Times (20% − 80%)
@ 1 GHz
Setup Time
Hold Time
Reset Recovery
(Note 34)
EE
= −3.465 V to −2.375 V or V
(OLS = V
SKEW
Characteristic
= |t
CC
PLH
− 0.8 V, OLS = FLOAT)
− t
(OLS = V
CC
PHL
− V
| for a nominal 50% differential clock input waveform.
R→Q, Q D
**(OLS = V
EE
(OLS = V
f
CLK→Q, Q
SEL→Q, Q
in
f
CC
DFF, DIV/2
in
(Applicable only when V
v 8 GHz
= 8 Gb/s
D→CLK
D→CLK
− 0.4 V)
CC
DIV/2
Q, Q
= 2.375 V to 3.465 V; V
DFF
DFF
IN
CC
EE
CC
/2
)
)
− V
Min
150
160
215
195
EE
75
28
15
25
20
30
25
40
http://onsemi.com
> 3.0 V, a 2 kW resistor should be connected from OLS to V
−40°C
TBD
Typ
215
190
280
270
0.5
10
40
40
35
35
14
12
8
5
9
CC
10
− V
EE
2600
EE
Max
285
280
375
345
20
65
65
65
65
= 0 V
1
< 2600 mV).
Min
150
160
215
195
75
28
15
25
20
30
25
40
25°C
TBD
Typ
215
190
280
270
0.5
10
40
40
35
35
10
12
8
5
7
2600
Max
285
280
375
345
20
65
65
65
65
1
Min
150
160
215
195
75
28
15
25
20
30
25
40
85°C
TBD
Typ
215
190
280
270
0.5
10
40
40
35
35
13
10
8
5
0
EE
.
2600
Max
285
280
375
345
20
65
65
65
65
1
GHz
Unit
mV
ps
ps
ps
ps
ps
ps
ps