nb4n316m ON Semiconductor, nb4n316m Datasheet - Page 5

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nb4n316m

Manufacturer Part Number
nb4n316m
Description
3.3 V Anylevel Receiver To Cml Driver/translator With Input Hysteresis
Manufacturer
ON Semiconductor
Datasheet

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NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
8. Measured by forcing V
9. Duty cycle skew is measured between differential outputs using the deviations of the sum of T
10. V
11. Additive RMS jitter with 50% duty cycle clock signal.
12. Additive peak-to-peak data dependent jitter with input NRZ data signal (PRBS 2
13. Device to device skew is measured between outputs under identical transition @ 0.5 GHz.
Figure 3. Output Voltage Amplitude (V
Table 5. AC CHARACTERISTICS
Symbol
V
V
f
t
t
t
t
V
t
t
DATA
PLH
PHL
SKEW
JITTER
r
f
OUTPP
OUTPP
INPP
800
700
600
500
400
300
200
100
Outputs must be connected through R
INPP
,
0
0.5
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
(V
(MAX) cannot exceed V
CC
Output Voltage Amplitude (R
(See Figure 12)
Output Voltage Amplitude (R
(See Figure 12)
Maximum Operating Data Rate
Propagation Delay to Output Differential
@ 0.25 GHz
Duty Cycle Skew (Note 9)
Device to Device Skew (Note 13)
RMS Random Clock Jitter R
R
Peak-to-Peak Data Dependent Jitter R
(Note 12)
Peak-to-Peak Data Dependent Jitter R
(Note 12)
Input Voltage Swing/Sensitivity
(Differential Configuration) (Note 10)
Output Rise/Fall Times @ 0.25 GHz
(20% - 80%)
L
- V
= 25 W (Note 11)
0.75
EE
INPUT CLOCK FREQUENCY (GHz)
= 3.3 V V
INPP
1
Characteristic
(MIN) from a 50% duty cycle clock source. All output loaded with an external R
TT
R
R
L
L
CC
= 3.3 V @ 255C V
1.25
= 50 W
= 25 W
- V
L
EE
V
L
L
L
CC
= 50 W and
= 50 W)
= 25 W)
f
f
f
f
f
f
f
f
f
f
f
f
f
. Input voltage swing is a single-ended measurement operating in differential mode.
in
in
in
in
in
in
in
in
in
DATA
DATA
DATA
DATA
to V
= 3.0 V to 3.6 V, V
≤ 1 GHz
≤ 1.5 GHz
≤ 2.0 GHz
≤ 1 GHz
≤ 1.5 GHz
≤ 2.0 GHz
= 750 MHz
= 1.5 GHz
= 2.0 GHz
1.5
OUTPP
TT
= 1.5 Gb/s
= 2.5 Gb/s
= 1.5 Gb/s
= 2.5 Gb/s
at power up. Input edge rates 150 ps (20% - 80%).
in
L
L
= 50 W
= 25 W
= 100 mV)
) versus Input Clock Frequency (f
1.75
Q, Q
http://onsemi.com
NB4N316M
EE
Min
550
400
200
280
280
200
350
200
2
1.5
= 0 V; (Note 8)
5
-40°C
Typ
660
640
400
370
360
300
550
150
2.5
20
15
20
10
2
1
1
1
5
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.5
Max
750
100
300
(V
20
55
85
35
35
3
3
3
CC
23
-1).
- V
0.75
Min
550
400
200
280
280
200
350
200
1.5
INPUT CLOCK FREQUENCY (GHz)
EE
= 3.0 V V
IN
25°C
Typ
660
640
400
370
360
400
550
150
2.5
) at Ambient Temperature (Typical)
20
15
20
10
pw-
2
1
1
1
5
1
and T
TT
Max
750
100
300
R
R
20
55
85
35
35
3
3
3
= 1.71 V @255C V
L
L
1.25
pw+
= 50 W
= 25 W
L
= 50 W and R
@ 0.25 GHz.
Min
550
400
200
280
280
200
350
200
1.5
1.5
85°C
Typ
660
640
400
370
360
400
550
150
2.5
20
15
20
10
2
1
1
1
5
in
L
= 25 W to V
= 100 mV)
1.75
Max
750
100
300
20
55
85
35
35
3
3
3
Gb/s
Unit
mV
mV
mV
ps
ps
ps
ps
TT
2
.

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