vsc835 Vitesse Semiconductor Corp, vsc835 Datasheet - Page 6

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vsc835

Manufacturer Part Number
vsc835
Description
34x34 Crosspoint Switch With Signal Detection Semiconductor Corporation
Manufacturer
Vitesse Semiconductor Corp
Datasheet
2.5 Gbits/sec
34x34 Crosspoint Switch with Signal Detection
Page 6
Table 4: Programming Port Interface Timing
note 1: measured from falling edge.
note 2: measured from rising edge.
DC Characteristics
Table 5: Power
Note: Icc Specified with outputs terminated with 50 ohms to +2.0V and Chip Vterm=+2.0V, Vcc = 3.45V
Parameter
T
Parameter
T
T
pwCONFIG
T
T
T
T
T
T
I
I
T
T
sCONFIG
T
T
pdADDR
T
T
pwWRB
TERM-V
TERM-E
pwRDB
tsDATA
pdRDB
pdstate
sWRB
hWRB
config
hRDB
sRDB
sCSB
pdint
I
P
CC
T
Switch configuration delay
Data read propagation delay from ADDR
Data read propagation delay from RDB (1)
Interrupt propagation delay from MONCLK (2)
MONCLK to internal state register change delay (2)
ADDR to RDB setup time
RDB to ADDR hold time
WRB setup time (for either ADDR or DATA)
WRB hold time (for either ADDR or DATA)
WRB to CONFIG setup time
CSB setup time (to either WRB or RDB)
CONFIG pulse width (high)
WRB pulse width (low and high)
RDB pulse width (low and high)
DATA tri-state delay (from either RDB or CSB) (2)
V
Total chip power
V
V
741 Calle Plano, Camarillo, CA 93012 • 805/388-3700 • FAX: 805/987-5896
CC
TERM
TERM
supply current
supply current with V
supply current with V
(over the specified operating conditions)
VITESSE
VITESSE SEMICONDUCTOR CORPORATION
SEMICONDUCTOR CORPORATION
Description
TERM
TERM
Description
=V
=V
CC
CC
-1.3V
-2.0V
Min
10
10
10
-
5
3
5
3
1
0
-
-
-
-
-
Max
(Max)
4060
30
-950
50
10
6
6
7
-
-
-
-
-
-
-
-
-
14
~0
VSC835
G52270-0, Rev. 4.1
Datasheet
Units
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mA
mA
mA
W
7/24/00

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