fw813 ON Semiconductor, fw813 Datasheet - Page 2

• Manufacturer Part Number: fw813
• Description: N-channel Silicon Mosfet General-purpose Switching Device Applications
• Manufacturer: ON Semiconductor

Electrical Characteristics at Ta=25°C
Switching Time Test Circuit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
P.G
10V
0V
5
4
3
2
1
0
PW=10μs
D.C.≤1%
0
V IN
0.1
Parameter
0.2
Drain-to-Source Voltage, V DS -- V
V IN
G
50Ω
0.3
I D -- V DS
0.4
V DD =30V
D
0.5
S
I D =5A
R L =6Ω
0.6
FW813
V (BR)DSS
I DSS
I GSS
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
R DS (on)3
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
Symbol
V OUT
0.7
0.8
I D =1mA, V GS =0V
V DS =60V, V GS =0V
V GS =±16V, V DS =0V
V DS =10V, I D =1mA
V DS =10V, I D =5A
I D =5A, V GS =10V
I D =3A, V GS =4.5V
I D =3A, V GS =4V
V DS =20V, f=1MHz
V DS =20V, f=1MHz
V DS =20V, f=1MHz
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
V DS =30V, V GS =10V, I D =5A
V DS =30V, V GS =10V, I D =5A
V DS =30V, V GS =10V, I D =5A
I S =5A, V GS =0V
0.9
IT16122
1.0
FW813
Conditions
10
9
8
7
6
5
4
3
2
1
0
0
V DS =10V
0.5
Gate-to-Source Voltage, V GS -- V
1.0
min
1.5
I D -- V GS
1.2
60
2.0
Ratings
typ
0.81
725
4.2
9.6
2.4
3.2
39
54
64
60
45
18
49
27
15
2.5
3.0
max
±10
2.6
1.2
49
76
90
No. A1884-2/4
1
3.5
IT16123
Unit
mΩ
mΩ
mΩ
μA
μA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
S
V
V
V
4.0