fw813 ON Semiconductor, fw813 Datasheet
fw813
Related parts for fw813
fw813 Summary of contents
Page 1
... Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Package Dimensions unit : mm (typ) 7005A-003 5 1.27 0.43 FW813 SANYO Semiconductors Symbol Conditions V DSS V GSS PW≤10μs, duty cycle≤ When mounted on ceramic substrate (2000mm P T When mounted on ceramic substrate (2000mm Tch Tstg Product & ...
Page 2
... 0.1 0.2 0.3 0.4 0.5 0.6 Drain-to-Source Voltage FW813 Symbol Conditions V (BR)DSS I D =1mA =0V I DSS V DS =60V =0V I GSS V GS =±16V = (off =10V =1mA | yfs | V DS =10V = (on =5A =10V R DS (on =3A ...
Page 3
... Drain Current =30V = Total Gate Charge FW813 140 Ta=25 ° C 120 100 --60 --40 --20 IT16124 =10V 1 0 ...
Page 4
... Ambient Temperature °C Note on usage : Since the FW813 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any " ...