mbm29dl324te90tr Meet Spansion Inc., mbm29dl324te90tr Datasheet - Page 42

• Manufacturer Part Number: mbm29dl324te90tr
• Description: 32 M 4 M ? 8/2 M ? 16 Bit Dual Operation Flash Memory
• Manufacturer: Meet Spansion Inc.

42
MBM29DL32XTE/BE
■ COMMAND DEFINITIONS
Device operations are selected by writing specific address and data sequences into the command register. Some
commands are required Bank Address (BA) input. When command sequences are inputted to bank being read,
the commands have priority than reading. “MBM29DL32XTE/BE Command Definitions” in “■ DEVICEBUS
OPERATION” defines the valid register command sequences. Note that the Erase Suspend (B0h) and Erase
Resume (30h) commands are valid only while the Sector Erase operation is in progress. Also the Program
Suspend (B0h) and Program Resume (30h) commands are valid only while the Program operation is in progress.
Moreover both Read/Reset commands are functionally equivalent, resetting the device to the read mode. Please
note that commands are always written at DQ
• Read/Reset Command
In order to return from Autoselect mode or Exceeded Timing Limits (DQ
Read/Reset operation is initiated by writing the Read/Reset command sequence into the command register.
Microprocessor read cycles retrieve array data from the memory. The devices remain enabled for reads until the
command register contents are altered.
The devices will automatically power-up in the Read/Reset state. In this case, a command sequence is not
required to read data. Standard microprocessor read cycles will retrieve array data. This default value ensures
that no spurious alteration of the memory content occurs during the power transition. Refer to the AC Read
Characteristics and Waveforms for the specific timing parameters.
• Autoselect Command
Flash memories are intended for use in applications where the local CPU alters memory contents. As such,
manufacture and device codes must be accessible while the devices reside in the target system. PROM pro-
grammers typically access the signature codes by raising A
onto the address lines is not generally desired system design practice.
The device contains an Autoselect command operation to supplement traditional PROM programming method-
ology. The operation is initiated by writing the Autoselect command sequence into the command register.
The Autoselect command sequence is initiated by first writing two unlock cycles. This is followed by a third write
cycle that contains the bank address (BA) and the Autoselect command. Then the manufacture and device
codes can be read from the bank, and an actual data of memory cell can be read from the another bank.
Following the command write, a read cycle from address (BA) 00h retrieves the manufacture code of 04h. A
read cycle from address (BA) 01h for ×16 ( (BA) 02h for ×8) returns the device code (MBM29DL322TE = 55h
and MBM29DL322BE = 56h for ×8 mode; MBM29DL322TE = 2255h and MBM29DL322BE = 2256h for ×16
mode) . (MBM29DL323TE = 50h and MBM29DL323BE = 53h for ×8 mode; MBM29DL323TE = 2250h and
MBM29DL324TE = 225Ch and MBM29DL324BE = 225Fh for ×16
mode) . (See “MBM29DL322/323/324TE/BE Sector Group Protection Verify Autoselect Codes Tables”, “Ex-
tended Autoselect Code Tables” in “■ DEVICE BUS OPERATION”.)
or unprotection) will be informed by address (BA) 02h for ×16 ( (BA) 04h for ×8) . Scanning the sector group
addresses (A
device output DQ
sector group protection on the protected sector. (See “Sector Address Table (MBM29DL324TE) ”, “Sector
Address Table (MBM29DL324BE) ”, “Sector Group Addresses (MBM29DL32XTE) (Top Boot Block) ” and
“Sector Group Addresses (MBM29DL32XBE) (Bottom Boot Block) ” in “■ FLEXIBLE SECTOR-ERASE AR-
CHITECTURE”.)
The manufacture and device codes can be allowed reading from selected bank. To read the manufacture and
device codes and sector group protection status from non-selected bank, it is necessary to write Read/Reset
command sequence into the register and then Autoselect command should be written into the bank to be read.
MBM29DL323BE = 2253h for ×16 mode) . (MBM29DL324TE = 5Ch and MBM29DL324BE = 5Fh for ×8 mode;
All manufacturer and device codes will exhibit odd parity with DQ
20
, A
19
0
, A
for a protected sector group. The programming verification should be performed by verify
18
, A
17
, A
16
, A
15
, A
Retired Product DS05-20881-8E_July 20, 2007
14
, A
80 / 90
13
, and A
0
to DQ
12
7
) while (A
and DQ
9
to a high voltage. However, multiplexing high voltage
8
7
6
defined as the parity bit. Sector state (protection
, A
to DQ
1
, A
15
0
) = (0, 1, 0) will produce a logical “1” at
5
bits are ignored.
= 1) to Read/Reset mode, the