mt3s06t TOSHIBA Semiconductor CORPORATION, mt3s06t Datasheet - Page 2

• Manufacturer Part Number: mt3s06t
• Description: Toshiba Transistor Silicon Npn Epitaxial Planar Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Microwave Characteristics
Electrical Characteristics
Caution
This device is sensitive to electrostatic discharge. Please handle with caution.
Transition frequency
Insertion gain
Noise figure
Collector cut-off current
Emitter cut-off current
DC current gain
Reverse transfer capacitance
Note: C
re
Characteristics
Characteristics
is measured by 3 terminal method with capacitance bridge.
(Ta = 25°C)
(Ta = 25°C)
⎪S
⎪S
Symbol
Symbol
NF (1)
NF (2)
21e
21e
I
I
CBO
EBO
h
C
f
FE
T
re
⎪
⎪
2
2
(1)
(2)
V
V
V
V
V
V
V
V
V
CE
CE
CE
CE
CE
CB
EB
CE
CB
= 3 V, I
= 1 V, I
= 3 V, I
= 1 V, I
= 3 V, I
= 5 V, I
= 1 V, I
= 1 V, I
= 1 V, I
2
C
C
C
C
C
C
E
C
E
Test Condition
Test Condition
= 0
= 0
= 0, f = 1 MHz
= 5 mA
= 5 mA, f = 2 GHz
= 7 mA, f = 2 GHz
= 3 mA, f = 2 GHz
= 3 mA, f = 2 GHz
= 5 mA
(Note)
Min
Min
6.5
70
⎯
⎯
⎯
⎯
⎯
⎯
7
Typ.
Typ.
0.25
8.5
9.5
1.7
1.6
10
⎯
⎯
⎯
MT3S06T
2007-11-01
Max
Max
140
0.1
0.7
⎯
⎯
⎯
3
3
1
GHz
Unit
Unit
dB
dB
μA
μA
pF