mt3s06t TOSHIBA Semiconductor CORPORATION, mt3s06t Datasheet

mt3s06t

Manufacturer Part Number

mt3s06t

Description

Toshiba Transistor Silicon Npn Epitaxial Planar Type

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.MT3S06T.pdf (5 pages)

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Part Number:

mt3s06t(T5LALPSS

Manufacturer:

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Part Number:

mt3s06t(TE85L,F)

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Company:

Meier Automation Equipment Co., Limited

Part Number:

mt3s06t(TE85L,F)

Manufacturer:

TOSHIBA/东芝

Quantity:

20 000

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VHF~UHF Band Low Noise Amplifier Applications

•

Absolute Maximum Ratings

Marking

Low noise figure: NF = 1.6dB (V

High gain: |S

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Base current

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

21e

= 9.5dB (V

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

= 3 V, I

(Ta = 25°C)

= 3 V, I

Symbol

CBO

CEO

EBO

stg

MT3S06T

= 7 mA, f = 2 GHz)

= 3 mA, f = 2 GHz)

−55~125

Rating

125

1.5

Unit

°C

Weight: 0.0022 g (typ.)

JEDEC

JEITA

TOSHIBA

2-1B1A

MT3S06T

2007-11-01

―

Unit: mm

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