fmc16n60e Fuji Electric holdings CO.,Ltd, fmc16n60e Datasheet - Page 3

• Manufacturer Part Number: fmc16n60e
• Description: N-channel Silicon Power Mosfet
• Manufacturer: Fuji Electric holdings CO.,Ltd

FMI16N60E
100
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
14
12
10
10
8
6
4
2
0
1
0.00
0
-50
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=8A,VGS=10V
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
Typical Gate Charge Characteristics
VGS=f(Qg):ID=16A,Tch=25
0.25
-25
20
0.50
0
µ
s pulse test,Tch=25
40
0.75
25
max.
VSD [V]
Qg [nC]
Tch [
typ.
1.00
60
480V
50
°
Vcc= 120V
C]
300V
°
C
1.25
75
80
°
1.50
100
C
100
1.75
125
120
2.00
150
3 3
10
10
10
10
10
10
10
10
10
6
5
4
3
2
1
0
3
2
1
0
4
3
2
1
0
10
10
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250 A
-50
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10Ω
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
-1
-1
-25
td(on)
tr
tf
10
0
td(off)
0
10
0
25
VDS [V]
ID [A]
Tch [
10
50
max.
1
min.
typ.
°
C]
75
10
1
µ
10
100
FUJI POWER MOSFET
2
Coss
Ciss
Crss
125
150
10
10
2
3