fmc16n60e Fuji Electric holdings CO.,Ltd, fmc16n60e Datasheet - Page 2

• Manufacturer Part Number: fmc16n60e
• Description: N-channel Silicon Power Mosfet
• Manufacturer: Fuji Electric holdings CO.,Ltd

FMI16N60E
400
300
200
100
100
0.1
40
30
20
10
10
0
0
1
0.1
0
0
Typical Output Characteristics
ID=f(VDS):80 s pulse test,Tch=25 C
Allowable Power Dissipation
PD=f(Tc)
Typical Transconductance
gfs=f(ID):80
25
4
µ
s pulse test,VDS=25V,Tch=25
µ
50
8
1
VDS [V]
Tc [
ID [A]
75
12
°
C]
100
16
10
°
125
20
°
C
150
100
24
2
2
100
10
10
10
10
10
0.8
0.7
0.6
0.5
0.4
0.3
0.1
10
1
-1
-2
2
1
0
10
2
0
Typical Transfer Characteristic
ID=f(VGS):80
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
Safe Operating Area
I
-1
D
=f(V
Pow er loss waveform :
Pow er loss waveform :
Square w aveform
Square w aveform
DS
VGS=4.5V
):Duty=0(Single pulse),Tc=25°C
5
3
P
P
P
t
10
t
D
D
D
0
µ
s pulse test,VDS=25V,Tch=25
10
µ
4
s pulse test,Tch=25
VGS[V]
VDS [V]
10
ID [A]
15
1
5
5V
20
10
FUJI POWER MOSFET
2
6
°
25
C
°
5.5V
10V
6V
C
100 s
t=
1 s
10 s
1ms
D.C.
10
µ
30
7
µ
µ
3