mcf52258 Freescale Semiconductor, Inc, mcf52258 Datasheet - Page 27

• Manufacturer Part Number: mcf52258
• Description: Mcf52259 Coldfire Microcontroller
• Manufacturer: Freescale Semiconductor, Inc

2.4
The flash memory characteristics are shown in
Freescale Semiconductor
1
2
System clock (read only)
System clock (program/erase)
16
17
18
The average chip-junction temperature (T
Where:
For most applications P
Solving equations 1 and 2 for K gives:
where K is a constant pertaining to the particular part. K can be determined from equation (3) by measuring P
for a known T
any value of T
Refer to the flash memory section for more information
Depending on packaging; see the orderable part number summary.
Thermal resistance between the die and the printed circuit board in conformance with JEDEC JESD51-8. Board
temperature is measured on the top surface of the board near the package.
Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883
Method 1012.1).
Thermal characterization parameter indicating the temperature difference between package top and the junction
temperature per JEDEC JESD51-2. When Greek letters are not available, the thermal characterization parameter is written
in conformance with Psi-JT.
1
Maximum number of guaranteed program/erase cycles
Data retention at average operating temperature of 85°C
A program/erase cycle is defined as switching the bits from 1 → 0 → 1.
Flash Memory Characteristics
T
Θ
P
P
P
A
D
INT
I/O
JA
A
A
. Using this value of K, the values of P
.
Parameter
= ambient temperature, °C
= package thermal resistance, junction-to-ambient, °C/W
= P
= chip internal power, I
= power dissipation on input and output pins — user determined, watts
I/O
INT
< P
Table 9. SGFM Flash Program and Erase Characteristics
+ P
INT
K = P
2
Table 10. SGFM Flash Module Life Characteristics
I/O
and can be ignored. An approximate relationship between P
Parameter
D
× (T
MCF52259 ColdFire Microcontroller, Rev. 1
J
A
) in °C can be obtained from:
+ 273 °C) + Θ
P
DD
T
Table 9
D
J
× V
=
=
K
T
DD
(V
(V
A
D
÷
and
DD
DD
+
, watts
and T
Symbol
(
f
sys(P/E)
f
T
(
sys(R)
P
J
= 3.0 to 3.6 V)
= 3.0 to 3.6 V)
JMA
1
Table
+
D
before failure
J
273°C
×
can be obtained by solving equations (1) and (2) iteratively for
× P
Θ
JMA
10.
D
)
2
)
(1)
(2)
(3)
0.15
Min
0
Retention
Symbol
P/E
Typ
—
—
D
and T
Electrical Characteristics
66.67 or 80
66.67 or 80
10,000
J
Value
(if P
10
Max
I/O
2
D
is neglected) is:
(at equilibrium)
1
1
Cycles
Years
Unit
MHz
MHz
Unit
27