lt4936 Lite-On Power Semiconductor, lt4936 Datasheet
lt4936
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lt4936 Summary of contents
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... Dual N-Channel 30-V Power MOSFET GENERAL DESCRIPTION The LT4936 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low ...
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... V =4.5V 4. =1.7A =0V, V =0V, f=1MHz =15V =15V =15V, R =15Ω =1.0A GEN R =6Ω G LT4936 Min Typ Max 30 1.0 1.4 ±100 =0V = 0.8 0.8 380 =0V, f=1.0MHz =10V, I =5.9A 3 =10V 32 5 Unit V 3 μA ...
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... Dual N-Channel 30-V Power MOSFET Typical Characteristics (T Rev 0. Nov. 2007 Mar,2007-Ver4.0 =25℃ Noted) J LT4936 03 ...
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... Dual N-Channel 30-V Power MOSFET Typical Characteristics (T Rev 0. Nov. 2007 Mar,2007-Ver4.0 =25℃ Noted) J LT4936 04 ...
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... Dual N-Channel 30-V Power MOSFET Rev 0. Nov. 2007 Mar,2007-Ver4.0 SOP-8 Package Outline DIM θ LT4936 MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.35 0.49 0.18 0.25 4.80 5.00 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0° 7° 05 ...