lt4542 Lite-On Power Semiconductor, lt4542 Datasheet
lt4542
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lt4542 Summary of contents
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... N- and P-Channel 30-V Power MOSFET GENERAL DESCRIPTION The LT4542 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone ...
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... D GEN G Min Typ N-Ch 1.0 1.5 P-Ch -1.0 -1.5 N-Ch P-Ch N-Ch P-Ch =55℃ N-Ch J =55℃ P-Ch J N-Ch 20 P-Ch -20 N-Ch 21 P-Ch 30 N-Ch 32 P-Ch 48 N-Ch 0.8 P-Ch -0.8 N-Ch 12 P-Ch 21 N-Ch 2 P-Ch 4 =-6.1A N-Ch 2.5 P-Ch 6 N-Ch 360 P-Ch 840 N-Ch 70 P-Ch 120 N-Ch 17 P-Ch 32 N-Ch 0.5 P-Ch 5.5 N-Ch 9.3 P-Ch 32 N-Ch 14 P-Ch 13 N-Ch 32 P-Ch 58 N-Ch 3.2 P-Ch 6.8 LT4542 Max Unit 3.0 V -3.0 ±100 nA ±100 1 -1 μ mΩ 1 420 980 pF Ω ...
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... N- and P-Channel 30-V Power MOSFET Typical Characteristics (T Rev 0. Nov. 2007 Nov, 2007-Ver4.0 =25℃ Noted) N-CHANNEL J LT4542 03 ...
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... N- and P-Channel 30-V Power MOSFET Typical Characteristics (T Rev 0. Nov. 2007 Nov, 2007-Ver4.0 =25℃ Noted) N-CHANNEL J LT4542 04 ...
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... N- and P-Channel 30-V Power MOSFET Typical Characteristics (T Rev 0. Nov. 2007 Nov, 2007-Ver4.0 =25℃ Noted) P-CHANNEL J LT4542 05 ...
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... N- and P-Channel 30-V Power MOSFET Typical Characteristics (T Rev 0. Nov. 2007 Nov, 2007-Ver4.0 =25℃ Noted) P-CHANNEL J LT4542 06 ...
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... N- and P-Channel 30-V Power MOSFET Rev 0. Nov. 2007 Nov, 2007-Ver4.0 SOP-8 Package Outline DIM θ LT4542 MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.35 0.49 0.18 0.25 4.80 5.00 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0° 7° 07 ...