lt4920c Lite-On Power Semiconductor, lt4920c Datasheet

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lt4920c

Manufacturer Part Number
lt4920c
Description
Dual N-channel 30-v Power Mosfet
Manufacturer
Lite-On Power Semiconductor
Datasheet
Rev 1. SEP. 2009
Dual N-Channel 30-V Power MOSFET
GENERAL DESCRIPTION
The LT4920C is the N-Channel logic enhancement mode power field
effect transistors, using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on state
resistance.
These devices are particularly suited for low voltage application such
as cellular phone, notebook computer power management and other
battery powered circuits, and low in-line power loss that are needed
in a very small outline surface mount package.
PIN CONFIGURATION
Absolute Maximum Ratings (T
The device mounted on 1in
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current(tJ=150℃)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction Temperature
Thermal Resistance-Junction to Ambient
Thermal Resistance-Junction to Case
Parameter
Top View
2
(SOP-8)
FR4 board with 2 oz copper
A
T
T
T
T
=25℃ Unless Otherwise Noted)
A
A
A
A
*
=25℃
=70℃
=25℃
=70℃
Symbol
V
V
R
R
I
P
T
DSS
GSS
I
DM
I
θJA
θJC
D
S
D
J
FEATURES
● 30V/6.9A, R
● 30V/5.8A, R
● Super high density cell design for extremely low R
● Exceptional on-resistance and maximum DC current
APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● DC/DC Converter
● Load Switch
● DSC
● LCD Display inverter
capability
Steady State
T≦10 sec
-55 to 150
DS(ON)
DS(ON)
Limit
±20
6.9
5.5
1.7
1.3
30
30
50
2
=35 mΩ@VGS=10V
=45 mΩ@VGS=4.5V
50
80
LT4920C
Unit
℃/W
℃/W
W
V
V
A
A
A
DS(ON)

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lt4920c Summary of contents

Page 1

... Dual N-Channel 30-V Power MOSFET GENERAL DESCRIPTION The LT4920C is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such ...

Page 2

... I =6. =1.7A =15V =15V f=1MHz V =15V, R =15Ω =1A, V =10V D GEN R =6Ω =1.7A, di/dt=100A/μs F LT4920C Min Typ Max 1 1.4 ±100 =0V = 0.75 11.5 =10V, I =6.9A 2.7 D 2.3 350 =0V 3.5 50 Unit μA ...

Page 3

... Dual N-Channel 30-V Power MOSFET Typical Characteristics (T Rev 1. SEP. 2009 =25℃ Noted) J LT4920C ...

Page 4

... Dual N-Channel 30-V Power MOSFET Typical Characteristics (T Rev 1. SEP. 2009 =25℃ Noted) J LT4920C ...

Page 5

... Dual N-Channel 30-V Power MOSFET NOTES: 1. PKG ALL SURFACES ARE Ra0.8-1.2um. 2. Mold flash, protrusions or gate burrs shall not exceed 0. total( both sides) . Rev 1. SEP. 2009 SOP-8 Package Outline LT4920C ...

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