vnd920p STMicroelectronics, vnd920p Datasheet

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vnd920p

Manufacturer Part Number
vnd920p
Description
Double Channel High Side Solid State Relay
Manufacturer
STMicroelectronics
Datasheet

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CONNECTION DIAGRAM (TOP VIEW)
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
(**) See application schematic at page 10
October 2003 - Revision 1.2 (Working document)
(*) Per channel with all the output pins connected to the PCB.
DESCRIPTION
The VND920P is a double chip device made by
using
Technology, intended for driving any kind of load
VND920P
SHUTDOWN
CMOS COMPATIBLE INPUT
PROPORTIONAL LOAD CURRENT SENSE
SHORTED LOAD PROTECTION
UNDERVOLTAGE AND OVERVOLTAGE
OVERVOLTAGE CLAMP
THERMAL SHUTDOWN
CURRENT LIMITATION
PROTECTION AGAINST LOSS OF GROUND
AND LOSS OF V
VERY LOW STAND-BY POWER DISSIPATION
REVERSE BATTERY PROTECTION (**)
TYPE
DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY
STMicroelectronics
®
R
16m
DS(on)
CC
V
INPUT 1
CURRENT SENSE 1
NC
NC
GND 2
CURRENT SENSE 2
NC
GND 1
V
INPUT 2
NC
V
V
35 A (*)
CC
CC
CC
CC
I
OUT
VIPower
1
1
2
2
36 V
V
CC
M0-3
14
1
with one side connected to ground. Active V
voltage clamp protects the device against low
energy
compatibility table). Active current limitation
combined with thermal shutdown and automatic
restart protect the device against overload. Built-
in analog current sense output delivers a current
proportional
automatically turns off in case of ground pin
disconnection.
SO-28
28
15
PACKAGE
spikes
OUTPUT 2
OUTPUT 1
OUTPUT 1
OUTPUT 1
OUTPUT 1
OUTPUT 1
OUTPUT 1
OUTPUT 2
OUTPUT 2
OUTPUT 2
V
OUTPUT 2
OUTPUT 2
V
SO-28 (DOUBLE ISLAND)
CC
CC
to
1
2
ORDER CODES
VND920P
the
(see
TUBE
load
TARGET SPECIFICATION
ISO7637
VND920P
VND920P13TR
current.
T&R
transient
Device
CC
1/18
pin
1

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vnd920p Summary of contents

Page 1

... THERMAL SHUTDOWN CURRENT LIMITATION PROTECTION AGAINST LOSS OF GROUND AND LOSS VERY LOW STAND-BY POWER DISSIPATION REVERSE BATTERY PROTECTION (**) DESCRIPTION The VND920P is a double chip device made by using STMicroelectronics VIPower Technology, intended for driving any kind of load CONNECTION DIAGRAM (TOP VIEW ...

Page 2

... VND920P BLOCK DIAGRAM V CC CLAMP GND 1 INPUT CLAMP GND 2 INPUT 2 2/18 OVERVOLTAGE DETECTION UNDERVOLTAGE DETECTION Power CLAMP DRIVER LOGIC CURRENT LIMITER V LIMITER DS I OUT OVERTEMPERATURE DETECTION OVERVOLTAGE DETECTION UNDERVOLTAGE DETECTION Power CLAMP DRIVER LOGIC CURRENT LIMITER V LIMITER DS I OUT OVERTEMPERATURE DETECTION ...

Page 3

... T =150ºC; I =45A) jstart CC2 CC1 I OUT1 OUTPUT1 INPUT1 I CURRENT SENSE 1 I OUTPUT2 INPUT2 I CURRENT SENSE 2 V GROUND2 SENSE2 GROUND1 I I GND2 GND1 VND920P Value Unit 0 200 mA Internally Limited +/- +15 V 4000 V 2000 V 5000 V 5000 V 355 mJ 6 ...

Page 4

... VND920P THERMAL DATA (Per island) Symbol Parameter R Thermal Resistance Junction-lead thj-lead R Thermal Resistance Junction-ambient (one chip ON) thj-amb R Thermal Resistance Junction-ambient (two chips ON) thj-amb (*) When mounted on a standard single-sided FR-4 board with 1cm Horizontal mounting and no artificial air flow. ELECTRICAL CHARACTERISTICS (8V<V (Per island) ...

Page 5

... All channels open CC j TSD to 90% I (see note 2) SENSE Test Conditions V =13V CC 5V<V <36V CC I =2A; V =0V; L=6mH OUT IN I =1A; T =-40°C....+150° C OUT j VND920P Min Typ Max Unit 3300 4400 6000 -10 +10 % 4200 4900 6000 4400 4900 5750 - 4200 4900 5500 4400 ...

Page 6

... VND920P Figure versus I OUT SENSE OUT 6500 I /I OUT SENSE 6000 5500 5000 4500 4000 3500 3000 Figure 2: Switching Characteristics (Resistive load R V OUT 80% dV /dt OUT (on SENSE 90% t DSENSE INPUT t d(on) 6/18 max.Tj=25...150°C min.Tj=25...150° C ...

Page 7

... Negative output voltage clamp 90 10% t d(off) INPUT OUTPUT VND920P dV /dt OUT (off CURRENT SENSE 0 Nominal 0 V SENSEH < TSD (T > TSD SENSEH 0 < Nominal 0 7/18 ...

Page 8

... VND920P ELECTRICAL TRANSIENT REQUIREMENTS ISO T/R 7637/1 I Test Pulse +26.5 V ISO T/R 7637/1 Test Pulse CLASS C All functions of the device are performed as designed after exposure to disturbance. E One or more functions of the device is not performed as designed after exposure to disturbance and cannot be returned to proper operation without replacing the device ...

Page 9

... LOAD CURRENTn SENSEn INPUTn LOAD CURRENTn LOAD VOLTAGEn SENSEn INPUTn LOAD VOLTAGEn LOAD CURRENTn SENSEn T T TSD INPUTn LOAD CURRENTn SENSEn NORMAL OPERATION UNDERVOLTAGE V USDhyst OVERVOLTAGE > V OVhyst CC USD SHORT TO GROUND SHORT <Nominal OVERTEMPERATURE VND920P <Nominal V SENSEH I = SENSE R SENSE 9/18 ...

Page 10

... VND920P APPLICATION SCHEMATIC +5V R prot R prot R prot C R prot R SENSE1,2 GND PROTECTION NETWORK REVERSE BATTERY Solution 1: Resistor in the ground line (R can be used with any type of load. The following is an indication on how to dimension the R resistor. GND 1) R 600mV / (I ). GND S(on)max (-I ) ...

Page 11

... Input High Level Vih (V) 3.6 3.4 3.2 3 2.8 2.6 2.4 2.2 2 -50 -25 150 175 Input Hysteresis Voltage Vhyst (V) 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 150 175 -50 -25 VND920P 100 125 150 175 Tc (° 100 125 150 175 Tc (° 100 125 150 175 Tc (° C) 11/18 ...

Page 12

... VND920P Overvoltage Shutdown Vov ( -50 - 100 125 Tc (°C) Turn-on Voltage Slope dVout/dt(on) (V/ms) 700 650 Vcc=13V 600 Rl=1.3Ohm 550 500 450 400 350 300 250 -50 - 100 125 Tc (ºC) On State Resistance Vs T case ...

Page 13

... C= Repetitive Pulse at T =125ºC Jstart Conditions: V =13.5V CC Values are generated with case of repetitive pulses, T (at beginning of each demagnetization) of every pulse must not exceed jstart the temperature specified above for curves B and Demagnetization 0.1 1 L(mH) Demagnetization VND920P 10 100 Demagnetization t 13/18 ...

Page 14

... dchip2 amb thB dchip1 thC dchip2 amb thA dchip2 dchip1 PCB Cu heatsink area (cm ^2)/island VND920P T Note jchip2 amb amb + dchip2 amb dchip1 dchip2 thC dchip1 amb dchip1 dchip2 =P ...

Page 15

... VND920P SO-28 Thermal Impedance Junction Ambient Single Pulse Zth(°C /W) 100 10 1 0.1 0.01 0.0001 0.001 0.01 Thermal fitting model of a two channels HSD in SO-28 Tj_1 Pd1 C1 C2 Tj_2 R1 R2 Pd2 T_amb 15/18 0 100 time(s) Pulse calculation formula where p Thermal Parameter Area/island (cm R1= (° ...

Page 16

... SO-28 MECHANICAL DATA mm. DIM. MIN. TYP A a1 0.10 b 0.35 b1 0. 17.7 E 10.00 e 1.27 e3 16.51 F 7.40 L 0.40 S inch MAX. MIN. TYP. 2.65 0.30 0.004 0.49 0.013 0.32 0.009 0.020 45 (typ.) 18.1 0.697 10.65 0.393 0.050 0.650 7.60 0.291 1.27 0.016 8 (max.) VND920P MAX. 0.104 0.012 0.019 0.012 0.713 0.419 0.299 0.050 16/18 ...

Page 17

... VND920P SO-28 TUBE SHIPMENT (no suffix TAPE AND REEL SHIPMENT (suffix “13TR”) TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 Tape width W Tape Hole Spacing P0 (± 0.1) Component Spacing P Hole Diameter D (± 0.1/-0) Hole Diameter D1 (min) Hole Position F (± 0.05) ...

Page 18

... The ST logo is a trademark of STMicroelectronics 2003 STMicroelectronics - Printed in ITALY- All Rights Reserved. Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. STMicroelectronics GROUP OF COMPANIES http://www.st.com VND920P 18/18 ...

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