vnd830p-e STMicroelectronics, vnd830p-e Datasheet - Page 8

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vnd830p-e

Manufacturer Part Number
vnd830p-e
Description
Double Channel High-side Driver
Manufacturer
STMicroelectronics
Datasheet
VND830P-E
Table 5.
1. Per device.
Table 6.
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
Table 7.
Table 8.
Symbol
Symbol
Symbol
Symbol
V
I
C
V
I
I
I
I
T
T
LSTAT
T
L(off1)
L(off2)
L(off3)
L(off4)
demag
I
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
I
STAT
T
STAT
S
V
TSD
SDL
hyst
lim
(1)
R
F
Status low output voltage
Status leakage current
Status pin input capacitance
Shutdown temperature
Reset temperature
Thermal hysteresis
Status delay in overload
conditions
Current limitation
Turn-off output clamp
voltage
Forward on voltage
Supply current
Off-state output current
Off-state output current
Off-state output current
Off-state output current
Power output (continued)
Protections
V
Status pin
CC
Parameter
Parameter
- output diode
Parameter
Parameter
(1)
Doc ID 17546 Rev 2
T
V
5.5 V < V
I
Off-state; V
V
Off-state; V
V
On-state; V
V
V
T
V
T
OUT
V
V
j
CC
j
j
IN
IN
IN
IN
IN
IN
IN
> T
Test conditions
= 125 °C
=25 °C
= V
= V
= 5 V; I
= V
= 0 V; V
= V
= V
= 13 V
= 2 A; L = 6 mH
I
Normal operation; V
Normal operation; V
-I
TSD
STAT
OUT
Test conditions
OUT
OUT
OUT
OUT
OUT
CC
= 1.6 mA
=1.3 A; T
Test conditions
OUT
Test conditions
CC
= 0 V
CC
= 0 V; T
CC
= 0 V
= 0 V; V
= 0 V; V
OUT
< 36 V
= 13 V;
= 13 V;
= 13 V;
= 0 A
= 3.5 V
j
j
=150°C
CC
CC
= 25°C
= 13 V;
= 13 V;
STAT
STAT
V
CC
Min.
150
135
7
6
= 5 V
= 5 V
-41
Min.
-75
Electrical specifications
0
Min.
V
Min. Typ. Max.
-
CC
Typ.
175
15
9
-48 V
Typ.
Typ.
12
12
5
-
Max.
CC
200
20
15
15
Max.
100
0.6
Max. Unit
0.5
10
-55
40
25
50
7
0
5
3
Unit
Unit
Unit
°C
°C
°C
µs
mA
µA
pF
A
V
µA
µA
µA
µA
µA
µA
A
V
V
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