tn8r04 Sanyo Semiconductor Corporation, tn8r04 Datasheet

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tn8r04

Manufacturer Part Number
tn8r04
Description
Switching Regulator Ic For Rcc
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
Ordering number : ENN7688
TN8R04
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Drain-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
IC Input Voltage
Allowable Power Dissipation
Operating Temperature
Junction Temperature
Storage Temperature
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Cutoff Voltage
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
[IC]
Restriction of Drive Voltage
Detection Voltage of Feedback and
Overload Amplifier
Original control IC for Delay RCC-type.
High voltage power MOSFET with current sense.
Overload protection.
Only few external components required.
Small Full-Isolation package : TO-220FI5H.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
ExPD (Excellent Power Device)
Switching Regulator IC for RCC
Method Power Supplies Applications
V (BR)DSS
R DS (on)
V GS (off)
V IN(OV)
Symbol
Symbol
I DSS
Coss
V DS
Topr
Ciss
V FB
Tstg
I DP
V IN
P D
I D
Tj
PW 10 s, duty cycle 1%
Tc=25 C
I D =1mA, V DELAY =0
V DS =800V, V DELAY =0
V DS =10V, I D =1mA
I D =1.8A, V DELAY =15V
V DS =20V, f=1MHz
V DS =20V, f=1MHz
I IN =1mA, V FB =0
V DELAY, V IN =10V, I IN =50mA
TN8R04
Conditions
Conditions
min
800
13004 TS IM TA-100895
3.0
30
Ratings
typ
1100
Ratings
170
2.3
2.0
--25 to +125
--55 to +150
max
10.5
800
150
3.5
2.0
1.0
4.0
2.9
30
30
No.7688-1/4
Unit
Unit
mA
pF
pF
W
W
V
A
A
V
V
V
V
V
C
C
C

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tn8r04 Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN TN8R04 ExPD (Excellent Power Device) Switching Regulator IC for RCC Method Power Supplies Applications Symbol ...

Page 2

... Symbol 1 FB Input for feedback voltage and current sense 2 DELAY Input for timing signal 3 DRAIN Power MOSFET Drain 4 VIN Input for Start-up voltage and drive voltage 5 SOURCE (GND) Power MOSFET Source (Ground) TN8R04 Symbol Conditions OSC 4.5 2.8 2.4 0 (0. Delay 1 Drain 3 VIN ...

Page 3

... Start-up Resistor Pin Definitions DELAY 3 : DRAIN 4 : VIN 5 : SOURCE (GND) [Semi-regulated control (AC) Start-up Resistor Feedback Control Capacitor Pin Definitions DELAY 3 : DRAIN 4 : VIN 5 : SOURCE (GND) TN8R04 Snubber Circuit + 5 4 Resonant Capacitor 3 Timing Capacitor 2 Drive 1 Circuit Feedback Control Capacitor Snubber Circuit + 5 4 ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2004. Specifications and information herein are subject to change without notice. TN8R04 2.5 <10 s 2.0 1.5 1 ...

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