bsb015n04nx3g Infineon Technologies Corporation, bsb015n04nx3g Datasheet - Page 6

• Manufacturer Part Number: bsb015n04nx3g
• Description: Optimostm3 Power- Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.0
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
10
2.4
1.6
1.2
0.8
0.4
5
4
3
2
1
DS
=f(T
2
0
0
-60
); V
j
); I
GS
D
5
-20
=0 V; f =1 MHz
=30 A; V
10
20
GS
98 %
V
=10 V
T
DS
15
j
60
[°C]
Coss
Ciss
[V]
Crss
typ
100
20
140
25
180
page 6
30
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
1000
100
3.2
2.4
1.6
0.8
10
=f(T
1
SD
4
0
0.0
-60
)
j
); V
j
GS
-20
150 °C
=V
0.5
DS
20
; I
D
=250 µA
V
T
SD
j
1.0
60
[°C]
25 °C, 98%
[V]
25 °C
BSB015N04NX3 G
100
1.5
150 °C, 98%
140
2009-05-11
180
2.0